SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
SKDH 116/..-L75
Preliminary Data
Features
! "#$$% & &
!' () * + #, -,.
Typical Applications
&
/
DH
%012 %002) %02 34 ""$ 5 &
% % 4 6$ 7
",$$ ".$$ 18 ""#9".:';-
";$$ "#$$ 18 ""#9"#:';-
Absolute Maximum Ratings 4 .- 7)
Symbol Conditions Values Units
Bridge - Rectifier
34 6- 7< & ""$ 5
3=129312 4 "$ < "6$ <> ?-$ 5
@ 4 "$ < "6$ <> A-$$ 5@
IGBT - Chopper
%+19%B+1 ".$$ 9 .$ %
34 .- ;$ 7 "$$ ;- 5
32 4 " < 4 .- ;$ 7 .$$ "-$ 5
Freewheeling - CAL Diode
%002 ".$$ %
3=4 .- ;$ 7 ?$ ;$ 5
3=2 4 " < 4 .- ;$ 7 "6$ "A$ 5
&> C 3B / : A$ *** D "-$ :A$***D ".- 7
: A$ *** D ".- 7
) "$ .#$ 7
% ** -$ () 021 " * 9 " ,$$$ 9 ,#$$ %
Characteristics 4 .- 7)
Symbol Conditions min. typ. max. Units
Diode - Rectifier
%E 9 >4 ".- 7 $)6 9 ; % 9 F
0>: " 89G
Thyristor - Rectifier
%=E 9 >4 ".- 7 ")" 9 # % 9 F
0>: / $)6A 89G
3B >4 ".- 7< ** - 5
%B 9 3B >4 .- 7 , 9 "-$ % 9 5
393'>4 .- 7 .-$ 9 #$$ 5
&9 >4 ".- 7 -$$ %9H
9 >4 ".- 7 ".- 59H
IGBT - Chopper
%+ 34 ;- 5) >4 .- 7<
%B+ 4 "- %
.),- %
0>: 3B $)A 89G
9 & &I "",)6 9 ?A)A
9 % 4 #$$ %< %B+ 4 "- %<
34 ?$ 5< >4 ".- 7<
6A-)A 9 ?A)A
+D+ >4 ".- 7< 0B4 "# J<
&
"6), K
CAL - Diode - Freewheeling
%E 9 >4 ".- 7 " 9 6 "). 9 "" % 9 F
0>: $)# 89G
3002 & &I #- 5
L 3=4 "$$ 5< %04 : :#$$ %<
3=9 4 : :"$$$ 59H
"- H
+ %B+ 4$%<>4 ".- 7 K
Temperature Sensor
01 4 .- "$$ 7< "$$$ "#;$ F
Mechanical data
21 M .)-- ,)A- N
SKDH 116/..-L75
1 18-10-2007 DIL © by SEMIKRON
Fig. 1 Power dissipation per module vs. output current Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode Fig. 4 Forward characteristic of single thyristor
Fig. 5 Temperature sensor characteristic Fig. 6 Typ. gate charge characteristic
SKDH 116/..-L75
2 18-10-2007 DIL © by SEMIKRON
Fig. 7 Output IGBT characteristic Ic=f(Vce), Tj=25°C Fig. 8 Output IGBT characteristic Ic=f(Vce), Tj=125°C
Fig. 9 Turn-on/-off energy=f(Ic) Fig. 10 Turn-on/-off energy=f(Rg)
Fig. 11 Gate trigger characteristic of a single thyristor
SKDH 116/..-L75
3 18-10-2007 DIL © by SEMIKRON
UL recognized
File n° E63 532 Dimensions in mm
B -?
B -?
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKDH 116/..-L75
4 18-10-2007 DIL © by SEMIKRON
