Document Number: 94263 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 17-Apr-08 1
Schottky Rectifier, 8 A
8TQ100GPbF
Vishay High Power Products
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 8TQ...GPbF Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV) 8 A
VR100 V
TO-220AC Anode
13
Cathode
Base
cathode
2Available
Pb-free
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 8 A
VRRM 100 V
IFSM tp = 5 µs sine 850 A
VF8 Apk, TJ = 125 °C 0.58 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 8TQ100GPbF UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94263
2Revision: 17-Apr-08
8TQ100GPbF
Vishay High Power Products Schottky Rectifier, 8 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
8 A TJ = 25 °C 0.72
V
16 A 0.88
8 A TJ = 125 °C 0.58
16 A 0.69
Maximum reverse leakage curent
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.28 mA
TJ = 125 °C 7
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC 8TQ100G
Document Number: 94263 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 17-Apr-08 3
8TQ100GPbF
Schottky Rectifier, 8 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
02.20.81.2
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.4 1.8
1000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.2 0.6 1.0 1.4 1.6 2.0
0.1
0.1
1
10
100
0.01
0.001
0
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
20 60 80 10040
0.0001
TJ = 175 °C
TJ = 150 °C
TJ = 50 °C
TJ = 75 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
1000
0 40 100
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20 60 80
TJ = 25 °C
10 30 50 70 90 110
0.1
1
10
0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94263
4Revision: 17-Apr-08
8TQ100GPbF
Vishay High Power Products Schottky Rectifier, 8 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
140
0
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
150
165
160
180
175
145
155
170
12108642
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
7
0
012
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
246810
1
2
3
5
6
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
1000
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
Document Number: 94263 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 17-Apr-08 5
8TQ100GPbF
Schottky Rectifier, 8 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Current rating (8 = 8 A)
2- T = TO-220
3- Q = Schottky “Q” series
4- Voltage rating (100 = 100 V)
5- G = Schottky generation
6- None = Standard production
PbF = Lead (Pb)-free
Tube standard pack quantity: 50 pieces
Device code
51324
6
8 T Q 100 G PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95221
Part marking information http://www.vishay.com/doc?95224
SPICE model http://www.vishay.com/doc?95291
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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