MUR420S - MUR460S
Taiwan Semiconductor
1 Version:E1903
4A, 200V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
● Glass passivated junction
● Ideal for automated placement
● Built-in strain relief
● Ultrafast recovery time for high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
MECHANICAL DATA
● Case: DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.25 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
4
A
VRRM
200 - 600
V
IFSM
75
A
TJ MAX
175
°C
Package
DO-214AB (SMC)
Configuration
Single die
DO-214AB (SMC)
PARAMETER
SYMBOL
MUR420S
MUR440S
MUR460S
UNIT
Marking code on the device
MUR420S
MUR440S
MUR460S
Repetitive peak reverse voltage
VRRM
200
400
600
V
Reverse voltage, total rms value
VR(RMS)
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Forward current
IF(AV)
4
A
Surge peak forward current, 8.3 ms single
half sine-wave superimposed on rated
load per diode
IFSM
75
A
Junction temperature
TJ
- 55 to +175
°C
Storage temperature
TSTG
- 55 to +175
°C
MUR420S - MUR460S
Taiwan Semiconductor
2 Version:E1903
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance per diode
RӨJA
45
°C/W
Junction-to-case thermal resistance per diode
RӨJC
8.5
°C/W
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
MUR420S
IF = 4A, TJ = 25°C
VF
-
0.875
V
MUR440S
MUR460S
-
1.250
V
MUR420S
IF = 4A, TJ = 150°C
VF
-
0.710
V
MUR440S
MUR460S
-
1.050
V
Reverse current @ rated VR
per diode (2)
MUR420S
TJ = 25°C
IR
-
5
μA
MUR440S
MUR460S
-
10
μA
MUR420S
TJ = 150°C
IR
-
150
μA
MUR440S
MUR460S
-
250
μA
Junction capacitance
1 MHz, VR=4.0V
CJ
65
-
pF
Reverse recovery time
MUR420S
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
25
ns
MUR440S
MUR460S
-
50
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
MUR420S - MUR460S
Taiwan Semiconductor
3 Version:E1903
PART NO.
PART
NO.
SUFFIX
PACKING
CODE
PACKING
CODE
SUFFIX
PACKAGE
PACKING
MUR4xxS
(Note 1,2)
H
R7
G
SMC
850 / 7" Plastic reel
R6
SMC
3,000 / 13" Paper reel
M6
SMC
3,000 / 13" Plastic reel
V7
Matrix SMC
850 / 7" Plastic reel
V6
Matrix SMC
3,000 / 13" Plastic reel
Note :
1. "xx" defines voltage from 50V (MUR42S) to 600V (MUR460S)
2. Only V6 and V7 are all green compound (halogen free)
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
MUR420SHR7G
MUR420S
H
R7
G
AEC-Q101 qualified
Green compound
MUR420S - MUR460S
Taiwan Semiconductor
4 Version:E1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
2
4
6
025 50 75 100 125 150 175
CASE TEMPERATURE (°C)
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
1
10
100
0.1 1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50m Vp-p
0.001
0.01
0.1
1
10
100
020 40 60 80 100
TJ=150°C
TJ=25°C
0.1
1
10
100
0 0.4 0.8 1.2 1.6 2
TJ=150°C
TJ=25°C
MUR460S
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
MUR420S - MUR460S
Taiwan Semiconductor
5 Version:E1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
PEAK FORWARD SURGE CURRENT (A)
0
25
50
75
100
110 100
NUMBER OF CYCLES AT 60 Hz
MUR420S - MUR460S
Taiwan Semiconductor
6 Version:E1903
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM.
Unit (mm)
Unit (inch)
Min.
Max.
Min.
Max.
A
2.90
3.20
0.114
0.126
B
6.60
7.11
0.260
0.280
C
5.59
6.22
0.220
0.245
D
2.00
2.62
0.079
0.103
E
1.00
1.60
0.039
0.063
F
7.75
8.13
0.305
0.320
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Matrix SMC SMC
Symbol
Unit (mm)
Unit (inch)
A
3.30
0.130
B
2.50
0.098
C
6.80
0.268
D
4.40
0.173
E
9.40
0.370
P/N
=Marking Code
G
=Green Compound
YW
=Date Code
F
=Factory Code
MUR420S - MUR460S
Taiwan Semiconductor
7 Version:E1903
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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