Schottky Barrier Beam-Lead and Packaged Ring Quads For Double Balanced Mixers up to 18 GHz x a e Description Single Barrier Ring Quads Each Schottky barrier diode quad consists of four closely matched diodes connected in a ring configuration. The four diodes are formed monolithicaily to assure close mat- ching of electrical characteristics: capacitance, forward voltage and series resistance. The silicon which originally connected the diodes in slice form is etched away so that each individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance, minimum connection lead inductance and permits the interconnection of the diodes into rings at the wafer level. Dual Barrier Ring Quads Each dual barrier ring quad consists of eight Schottky diodes connected in a ring configuration. Each arm of the quad consists of two high barrier Schottky diodes. The structure is formed monolithically to assure close matching of electrical characteristics. Features @ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING @ HIGH RELIABILITY @ CLOSELY MATCHED JUNCTION FOR HIGH ISOLATION @ HIGH BARRIERS FOR LO POWER LEVELS UP TO +27 dBm @ DEVICES 100% TESTED @ MINIMUM PARASITICS FOR BROAD- BAND DESIGNS M/A-COM's ring quads are available in five case styles which are compatible with microstrip assembly techniques. The 226 case style is hermetically sealed and should be used in either harsh environments or very high reliability situations. The 228 case style is a low-cost package close to the physical size of the 226 case style. The smaller case style, 227, is physically smaller than the others and should be used for either high frequency or maximum bandwidth applications. Case style 905, designed specifically for broadest bandwidth, features unpackaged beam-lead quads. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 211 Schottky Barrier Beam-Lead and Packaged Ring Quads Specifications @ TA = 25C Maximum? Maximum" Typical? Forward Maximum? Maximum | Capacitance Forward Voltage Series Capacitance | Ditference Voltage Difference | Resistance Model Case Freq. Cj ACT F AVE Rs Number Style Band (pF) (pF) (Volts) (Volts) (Ohms) Low Barrier Ring Quads MA40430 226 L-S 0.55 0.10 .250 .020 7 MA40431 227 LS 0.40 0.10 .250 .020 7 MA40432 228 L-S 0.50 0.10 .250 -020 MA40439 228 L-S 0.50 0.20 .250 .020 7 MA40433 226 Cc 0.30 0.05 270 .020 10 MA40434 227 Cc 0.30 0.10 .270 .020 10 MA40437 264 C-X 0.25 0.10 .270 .020 10 MA40435 227 Xx 0.20 0.05 300 .020 12 MA40436 227 Ku 0.15 0.05 .300 .020 12 MA40438 264 X-Ku 0.15 0.05 300 .020 12 MA40284 963 X-Ku 0.10 0.05 310 .020 18 Medium Barrier Ring Quads MA40440 226 LS 0.50 0.10 .350 .020 7 MA40441 227 LS 0.45 0.10 .350 .020 7 MA40442 228 LS 0.50 0.10 .350 .020 7 MA40449 228 L-S 0.50 0.20 .350 .020 7 MA40443 226 Cc 0.30 0.05 .370 .020 10 MA40444 227 Cc 0.30 0.10 .370 .020 10 MA40445 228 Cc 0.30 0.10 .370 .020 10 MA40448 264 C-X 0.25 0.10 .370 .020 10 MA40446 227 x 0.20 0.05 .410 .020 12 MA40447 227 Ku 0.15 0.05 .410 .020 12 MA40450 264 X-Ku 0.15 0.05 .410 .020 12 MA40285 963 X-Ku 0.10 0.05 .410 .020 18 High Barrier Ring Quads MA40490 226 L-S 0.50 0.10 -550 020 7 MA40491 227 L-S 0.45 0.10 -550 .020 7 MA40492 228 L-S 0.50 0.10 .550 .020 7 MA40499 228 L-S 0.50 0.20 -550 .020 7 MA40493 226 Cc 0.30 0.05 570 .020 10 MA40494 227 Cc 0.30 0.10 570 .020 10 MA40495 228 C 0.30: 0.10 570 .020 10 MA40487 264 C-X 0.25 0.10 -570 .020 12 MA40496 227 x 0.20 0.05 -610 .020 12 MA40497 227 Ku 0.15 0.05 -610 .020 12 MA40488 264 X-Ku 0.15 0.05 610 .020 12 MA40286 963 X-Ku 0.10 0.05 -610 .020 18 Notes: see top of next page M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 212 Schottky Barrier Beam-Lead and Packaged Ring Quads Specifications @ TA = 25C (Contd) NOTES: 1. Cy is measured across diagonal contacts. ACT is measured across adjacent contacts. Capacitance is measured at zero bias and 1 MHz. 2. Vp and AVf are measured across adjacent contacts at 1 - 1.0mA. 3. Series resistance, Rg, is determined by subtracting the junction resistance, Ry, from the measured value of dynamic (slope) resistance, Rp: Rs - Rp Ry ohms Junction resistance is computed from: Ay = 26/lp ohms Ip is the forward current in mA. Dual High Barrier Beam-Lead Ring Quads Maximum? Maximum*4 Junction Junction Typical? Typical Forward Capacitance Capacitance Resistance Forward Voltage Cy Difference Rr Voltage Difference Model Frequency (pF) ACy (Q) VE AVF Number Band Min. Max. (pF) (Vv) (Vv) MA40482 Ss 0.20 0.30 0.10 14 1.10 0.020 MA40483 X 0.12 0.20 0.10 20 1.14 0.020 MA40484 Ku 0.05 0.12 0.05 24 1.21 0.020 NOTES: 1. Cy is measured across diagonal leads at Vp = OV and F = 1.0 MHz. Cs is comprised of the capacitance of two diode junctions in series. Np . Ag is the diode series resistance which is the dynamic resistance, Ar, minus the junction resistance, Ry. The junction resistance is Ry = 26/ig is the DC bias current expressed in milliamperes. Ry is measured for Ip = 10 mA and the junction resistance, Ry, is subtracted from Ry to determine Rg. Rg is MAXIMUM RATINGS Operating and Storage Temperature Range of Junctions -65C to + 150C Maximum Power Dissipation (derate linearly to zero allowable dissipation at 150C) Soldering Temperature Beam Strength 75 mWijunction 235C for 10 sec. 2g (Case Styles 264 and 905) measured across adjacent quad leads and it is comprised of the series resistance of two diode junctions in series. 3. ACy is measured across adjacent quad leads at VR = OV and F = 1.0 MHz. 4. Vp and AVe are measured across adjacent quad teads at Ip = 1.0 mA. VF is comprised of the forward voltage of two diode junctions in series. Ordering Information The model number for Ring Quads includes the case style. The case style for the dual barrier ring quad is specified by adding the case style number to the basic part number. For example, the MA40482-226 is the S- Band device in the 226 package. M/A-CON, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 213 Case Styles 264 1008 Schottky Barrier Beam-Lead and Packaged Ring Quads 227 228 M/A-COM, Inc. a 214 43 South Ave, Burlington, MA 01803 a 800-366-2266