SURFACE MOUNT SILICON ZENER DIODES
As Indicated below with Cathode Band
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Forward Voltage Drop @ IF 10mA
* Mounted on 5.0mm
( 0.13mm thick) land areas
** Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute
ELECTRICAL CHARACTERISTICS (T
=25°C unless specified otherwise) V
@ 10mA <0.9V
IR @ VR
max max max max
4.94 78 5.0 500 1.0 5.0 1.0
5.36 60 5.0 480 1.0 0.1 0.8
5.88 40 5.0 400 1.0 0.1 1.0
6.51 10 5.0 200 1.0 0.1 2.0
7.14 85.0 150 1.0 0.1 3.0
7.88 75.0 50 1.0 0.1 5.0
8.61 75.0 50 1.0 0.1 6.0
9.56 10 5.0 50 1.0 0.1 7.0
10.50 15 5.0 70 1.0 0.1 7.5
11.55 20 5.0 70 1.0 0.1 8.5
12.60 20 5.0 90 1.0 0.1 9.0
13.65 25 5.0 110 1.0 0.1 10
15.75 30 5.0 110 1.0 0.1 11
16.80 40 5.0 170 1.0 0.1 12
18.90 50 5.0 170 1.0 0.1 14
21.00 50 5.0 220 1.0 0.1 15
23.10 55 5.0 220 1.0 0.1 17
25.20 80 5.0 220 1.0 0.1 18
28.35 80 5.0 250 1.0 0.1 20
31.50 80 5.0 250 1.0 0.1 22.5
34.65 80 5.0 250 1.0 0.1 25
37.80 90 5.0 250 1.0 0.1 27
40.95 90 5.0 300 1.0 0.1 29
BZT52C4V7_39V Rev180105E
UNITVALUE
0.9
410 V
WH
Operating Junction and Storage Temperature
Range - 55 to +150
WF
WG
ZZK @ IZK
W8
VZ @ IZT Marking
Code
4.47
Zener Voltage
W9
WA
WB
WC
WD
WE
(V) ZZT @ IZT
min
SYMBOL
VF
*PD
**IFSM
Power Dissipation @ 25ºC
Peak Forward Surge Current, 8.3ms Single
Half Sine-WaveSuperimposed on Rated Load
Tj
A
Zener Impedance
Current
mW
°C
2.0
BZT52C 4V7
BZT52C 5V1
BZT52C 5V6
Device #
BZT52C 6V2
BZT52C 6V8
BZT52C 7V5
BZT52C 8V2
BZT52C 9V1
BZT52C 10
BZT52C 11
BZT52C 12
BZT52C 13
BZT52C 15
BZT52C 16
BZT52C 18
BZT52C 20
BZT52C 22
BZT52C 24
BZT52C 27
BZT52C 30
BZT52C 33
BZT52C 36
BZT52C 39
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
34.20
37.05
WO
WP
WR22.80
25.65
28.50
31.35
WI
WK
WL
WM
WX
BZT52C 4V7 to 39V
WS
WT
WU
WW
WN
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company