HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 1/6
HMJE13009AR HS MC Produc t Specification
HMJE13009AR
12 Ampere NPN Silicon Power Transistor
Description
The HMJE13009AR is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
Specification Features
• VCEO(sus) 400V
• Reverse Bias SO A with Induc t iv e Loads @T C=100°C
• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C / TC @8A, 100°C is 120ns(Typ.)
• 700V Blocking Capability
Absolute Maximum Ratings
Characteristic Symbol Max. Unit
Collector-Emitter Voltage VCEO(sus) 400 Vdc
Collector-Emitter Voltage VCEV 700 Vdc
Emitter-Base Voltage VEBO 9Vd
Collector Current-Continuous IC12 Adc
Collector Current-Peak* ICM 24 Adc
Base Current-Continuous IB6Adc
Base Current-Peak* IBM 12 Adc
Emitter Current-Continuous IE18 Adc
Emitter Current-Pea k IEM 36 Adc
Total Powe r Dissipation@TC=25°CPD130 Watts
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance, Junction to Case RθJC 1°C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds TL275 °C
TO-247 (TO-3P)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 2/6
HMJE13009AR HS MC Produc t Specification
Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
• Off Characteristics
Collector-Emitter Sustaining Voltage
(IC=10mA, IB=0) VCEO(sus) 400 - - Vdc
Collector Cutoff Current
(VCEV=Rated Value, VBE(off)=1.5Vdc
(VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C) ICEV -
--
-1
5mAdc
Emitter Cutoff Current (VEB=9Vdc, IC=0) IEBO --1mAdc
• Second Breakdown
Second Breakdown Collector Current with base forward biased
Clamped Induc ti ve SOA with Base Rever s e Biase d Is/bSee Fig 1
See Fig 2
• On Characteristics
DC Current Gain (IC=0.5Adc, VCE=5Vdc)
DC Current Gain (IC=5Adc, VCE=5Vdc)
DC Current Gain (IC=8Adc, VCE=5Vdc)
DC Current Gain (IC=12Adc, VCE=5Vdc)
*hFE1
*hFE2
*hFE3
*hFE4
15
13
8
5
-
-
-
-
-
22
-
-
Collector-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=12Adc, IB=3Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
-
-
-
-
-
-
-
-
1
1.5
3
2
Vdc
Base-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
-
-
-
-
-
-
1.3
1.6
1.5
Vdc
• Dynamic Characteristics
Current Gain Ban d width Prod uc t
(IC=500mAdc, VCE=10Vdc, f=1MHz) fT4--MHz
Output Capacitance
(VCB=10Vdc, IE=0, f=0.1MHz) Cob - 180 - pF
• Switching Characteristics
Delay Ti me td- 0.06 0.1 uS
Rise Time tr-0.451 uS
Storage T i me ts-1.33 uS
Fall Time
(VCC=125Vdc, IC=8A)
IB1=IB2=1.6A, tp=25uS
Duty Cycle≤1% tf-0.20.7uS
• Inductive Load, Clamped
Voltage Stor a ge Time tsv - 0.92 2.3 uS
Crossov e r Time (IC=8Adc, Vclamp=300Vdc)
(IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C) tc- 0.12 0.7 uS
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 3/6
HMJE13009AR HS MC Produc t Specification
Characteristics Curve
Fig 5. Satur ation Voltage & Collec tor Current
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100
Collec tor Current ( A)
Satur a t ion Voltag e ( V)...
V
CE(sat)
@ I
C
=4I
B
75
o
C
125
o
C
25
o
C
Fi g 1. Safe Operating Area
0.1
1
10
100
1 10 100 1000
Forward Voltage - V
CB
(V)
Collector Current-Ic (A)...
1ms
100ms
1s
TC≤100oC
IB1=2.5A
VBE(off)=9V
5V
3V
1.5V
100 200 3000 400 500 600 700 800
0
2
4
6
8
10
12
14
VCEV, Collector-Emitter Clamp Voltage (V)
IC, Collector Current (A)
Fig 2. Reverse Bias Switching Safe Operating Area
Fi g 3. Cu rr ent Ga in & Collector Curren t
1
10
100
0.001 0.01 0.1 1 10 100
Collec tor Cur r e nt ( A)
hFE
V
CE
=5V
125
o
C75
o
C
25
o
C
Fi g 4. Saturation Vol ta ge & Collect or Current
0.1
1
10
0.001 0.01 0.1 1 10 100
Collector Cu rr ent (A)
Saturation Voltage (V)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=5I
B
Fig 6. Satur ation Voltage & Collec tor Curr ent
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100
Collec tor Current ( A)
Satur a t ion Voltag e ( V)
V
CE(sat)
@ I
C
=5I
B
25
o
C
125
o
C
75
o
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 4/6
HMJE13009AR HS MC Produc t Specification
Fi g 8. Switching Time & C ollector Current
0.1
1
10
0.1 1 10 100
Collec tor Current ( A)
Switchin g Time (us ) ...
V
C
=125V, I
C
=5I
B1
, I
B1
=-I
B2
Ton
Tstg
Tf
Fi g 7. Capacitance & Reverse- B ia sed Voltage
1
10
100
1000
0.1 1 10 100
R everse-Biased Vol tage (V)
Capacitance (pF)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 5/6
HMJE13009AR HS MC Produc t Specification
TO-247(TO-3P) Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc t s without not ic e.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-S han N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
J
H
G
I
r1
DB
C
M
L
K
F
A
123
E
DIM Min. Max.
A 15.77 16.03
B 20.77 21.07
C 20.05 20.31
D 4.40 4.50
E 4.22 4.32
F 5.32 5.58
G 4.90 5.10
H 1.92 2.08
I 2.33 2.43
J0.60-
K 1.15 1.25
L 1.95 2.05
M 2.85 3.11
r1 3.65 3.75
Unit: mm
Marking:
H
13
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
0JE
M
Control Code
Date Code
09A
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammabilit
y
solid burnin
g
class: UL94V-0
3-Lead TO-247 (TO-3P)
Plastic Package
HSMC Package Code: R
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200502
Issued Date : 2005.10.01
Revised Date : 2005. 10.19
Page No. : 6/6
HMJE13009AR HS MC Produc t Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime maintained abov e :
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Te mperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
