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12/7/04
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
12V 8.5mΩ27nC
Notes through are on page 9
PD - 95089A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθJA Junction-to-Ambient (PCB mount)* ––– 40 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 12 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 84
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 60A
IDM Pulsed Drain Current320
PD @TC = 25°C Maximum Power Dissipation 88 W
PD @TC = 100°C Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
lHigh Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
lPower Management for Netcom,
Computing and Portable Applications.
lLead-Free
D-Pak I-Pak
IRLR3802 IRLU3802
IRLR3802PbF
IRLU3802PbF
IRLR/U3802PbF
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Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.81 1.2 V TJ = 25°C, IS = 12A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V
trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 12A, VR=20V
Qrr Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=20V
Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
S
D
G
Diode Characteristics
84
320
A
VSD Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.5 8.5 VGS = 4.5V, ID = 15A
––– ––– 30 VGS = 2.8V, ID = 12A
VGS(th) Gate Threshold Voltage 0.6 ––– 1.9 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C
––– ––– 100 µA VDS = 9.6V, VGS = 0V
––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
gfs Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A
QgTotal Gate Charge ––– 27 41
Qgs1 Pre-Vth Gate-Source Charge ––– 3.6 ––– VDS = 6.0V
Qgs2 Post-Vth Gate-Source Charge ––– 2.0 ––– VGS = 5.0V
Qgd Gate-to-Drain Charge ––– 10 ––– nC ID = 6.0A
Qgodr Gate Charge Overdrive ––– 11 ––– See Fig.16
Qsw Switch Charge (Qgs2 + Qgd) ––– 12 –––
Qoss Output Charge ––– 28 ––– nC VDS = 10V, VGS = 0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 6.0V, VGS = 4.5V
trRise Time ––– 14 ––– ns ID = 12A
td(off) Turn-Off Delay Time ––– 21 ––– Clamped Inductive Load
tfFall Time ––– 17 –––
Ciss Input Capacitance ––– 2490 ––– VGS = 0V
Coss Output Capacitance ––– 2150 ––– pF VDS = 6.0V
Crss Reverse Transfer Capacitance ––– 530 ––– ƒ = 1.0MHz
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
mΩRDS(on) Static Drain-to-Source On-Resistance
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 300 mJ
IAR Avalanche Current––– 20 A
Avalanche Characteristics
IRLR/U3802PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0. 1 110
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10 V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
0. 1 110
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
0
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 5.0V
20µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 4.5V
IRLR/U3802PbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + C
gd , Cds SHORTED
Crss = C
gd
Coss = C
ds + C
gd
0 1020304050
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 12V
ID= 6.0A
0 1 10 100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
IRLR/U3802PbF
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Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
1E- 006 1E-005 0. 0001 0. 001 0. 01 0. 1
t1 , Rectangular Pulse Duration (sec)
0. 001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
ID , Drain Current (A)
LIMITED BY PACKAGE
VGS
VDS
90%
10%
td(on) td(off)
tftr
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
IRLR/U3802PbF
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 14. Gate Charge Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 13. Threshold Voltage Vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS(th) Gate threshold Voltage (V)
ID = 250µA
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
1000
2000
3000
4000
5000
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 8.0A
14A
BOTTOM 20A
IRLR/U3802PbF
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Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
IRLR/U3802PbF
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
IN THE ASSEMBLY LINE "A"
ASS EMBLED ON WW 16, 1999
EXAMPLE:
WIT H AS S E MB L Y
T HIS IS AN IRF R120
LOT CODE 1234
YEAR 9 = 1999
DAT E CODE
WE E K 16
PART NUMBER
LOGO
INT ERNAT IONAL
RECTIFIER
ASSEMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DAT E CODE
OR
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Note: "P" in assembly line pos ition
i ndicates "L ead-F r ee"
12 34
WE E K 16
A = ASSEMBLY SITE CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
IRLR/U3802PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
ASSEMBLY
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFU120
YEAR 9 = 1999
DAT E CODE
LINE A
WEEK 19
IN THE ASSEMBLY LINE "A"
AS S E MBLED ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRF U120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assembly line
position indicates "Lead-Free"
OR
56 78
ASSEMBLY
LOT CODE
RECT IFIER
LOGO
INTERNATIONAL
IRFU120
PART NUMBER
WE E K 19
DAT E CODE
YEAR 9 = 1999
A = ASSEMBLY SITE CODE
P = DE S I GN AT E S L E AD- F R E E
PRODUCT (OPT IONAL)
IRLR/U3802PbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrialmarket.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
