DSP25-16AR Standard Rectifier VRRM = 2x 1600 V I FAV = 25 A VF = 1.16 V Phase leg Part number DSP25-16AR Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130124b DSP25-16AR Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1600 V TVJ = 25C 40 A VR = 1600 V TVJ = 150C 1.5 mA TVJ = 25C 1.23 V 1.47 V 1.16 V IF = forward voltage drop min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 150 C TC = 110C 1.50 V T VJ = 175 C 25 A TVJ = 175 C 0.81 V 180 sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 13.8 m 1.5 K/W K/W 0.25 TC = 25C 100 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130124b DSP25-16AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 175 C Weight 6 FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 2.7 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking UL listed Logo IXYS (R) ISOPLUS(R) ABCXXXXXX Part No. Ayyww Assembly Line NNNNNN Date Code Assembly Code Ordering Standard Part Number DSP25-16AR Similar Part DSP25-16A DSP25-16AT DSP25-12A DSP25-12AT Equivalent Circuits for Simulation I V0 R0 Marking on Product DSP25-16AR Package TO-247AD (3) TO-268AA (D3Pak) (2) TO-247AD (3) TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 480355 Voltage class 1600 1600 1200 1200 T VJ = 175C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 11.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130124b DSP25-16AR Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 c b4 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130124b DSP25-16AR Rectifier 60 300 10 3 50 Hz, 80% VRRM VR = 0 V 50 TVJ = 45C IFSM 40 IF 2 It TVJ = 45C 30 [A2s] [A] [A] TVJ = 150C 10 2 200 20 TVJ = 125C TVJ = 150C 10 TVJ = 25C 0 0.5 1.0 100 0.001 1.5 10 1 0.01 0.1 1 1 2 3 4 5 6 7 8 91 0 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 40 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 20 [W] 2 80 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 [A] 10 20 0 0 0 5 10 15 20 25 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [C] Tamb [C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.6 1.2 ZthJ Constants for ZthJC calculation: 0.8 [K/W] 0.4 0.0 0.0001 0.001 0.01 0.1 1 i Rthi (K/W) ti (s) 1 0.06075 0.0004 2 0.183 0.00256 3 0.3405 0.0045 4 0.543 0.0242 5 0.3728 0.15 10 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130124b