DSP25-16AR
Phase leg
Standard Rectifier
1 2 3
Part number
DSP25-16AR
Backside: isolated
FAV
F
VV1.16
RRM
25
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
ISOPLUS247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20130124bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP25-16AR
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.23
R1.5 K/W
R
min.
25
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
100 WT = 25°C
C
RK/W
25
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.47
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
13.8 mΩ
V1.16T = °C
VJ
I = A
F
V
25
1.50
I = A
F
50
I = A
F
50
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
10
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1600
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130124bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP25-16AR
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
UL listed
IXYS
NNNNNN
Assembly Code
Ayyww
Assembly Line
ISOPLUS®
ABCXXXXXX
®
DSP25-16AT TO-268AA (D3Pak) (2) 1600
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 70 A
per terminal
175-40
terminal to terminal
DSP25-12A
DSP25-12AT
TO-247AD (3)
TO-268AA (D3Pak) (2)
1200
1200
ISOPLUS247
Similar Part Package Voltage class
DSP25-16A TO-247AD (3) 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSP25-16AR 480355Tube 30DSP25-16ARStandard
3000
3600
ISOL
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 11.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130124bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP25-16AR
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0. 04 mm over plas ti c
surface level of device bottom si de
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except Lmax.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 5.45 BSC 0.215 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim. Millimeter Inches
E
123
R
DL
L1
Q
3x b
2x b2
b4
W
A
A2
c
A1
2x e
E1
D1
D2
D3
1 2 3
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20130124bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP25-16AR
0.001 0.01 0.1 1
100
200
300
23456789011
10
1
10
2
10
3
0.5 1.0 1.5
0
10
20
30
40
50
60
0 5 10 15 20 25
0
10
20
30
40
0 50 100 150 200
0.0001 0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
20
40
60
80
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 45°C
T
VJ
=150°C
T
VJ
= 150°C
V
R
=0 V
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJ
[K/W]
Fig. 1 Forward current versus
voltagedropperdiode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.06075 0.0004
2 0.183 0.00256
3 0.3405 0.0045
4 0.543 0.0242
5 0.3728 0.15
T
VJ
= 25°C
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130124bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
