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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2907AE TRANSISTOR
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
FEATURES
Complementary NPN Type available(MMBT2222AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2F
C
2F
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -600 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55to+150
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10μA,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO I
C= -10mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V
Collector cut-off current ICBO V
CB=-50 V,IE=0 -0.01
μA
Emitter cut-off current IEBO V
EB= -5V,IC=0 -0.01
μA
hFE(1) V
CE=-10V,IC=-0.1mA 75
hFE(2) V
CE=-10V,IC=-1mA 100
hFE(3) V
CE=-10V,IC=-10mA 100
hFE(4) V
CE=-10V,IC=-150mA 100 300
DC current gain
hFE(5) V
CE=-10V,IC=-500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
-1.6
-0.4 V
Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
-2.6
-1.3 V
Transition frequency fT VCE=-20V, IC=-50mA
f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 8 pF
Noise figure NF VCB=-5V,Ic=-0.1mA,
f=1KHz,Rs=1KΩ 4 dB
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR