LE D i 44855452 goga904 3 | Data Sheet No. PD-9.454C INTERNATIONAL RECTIFIER TUFI-Y INTERNATIONAL RECTIFIER | Ta REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175C OPERATING TEMPERATURE HEXSense Current Sense IRC5s0 Cc Series 3) Power MOSFET IRCS531 KELVIN SOURCE . N-CHANNEL a CURRENT S SENSE 100 Volt, 0.16 Ohm Current Sense Product Summary Plastic Package Similar to TO-220 BV, R I The HEXSense C Power MOSFETs incorporate a cur- Part Number DSS DS(on) D rent sensing feature, obtained by isolating a few cells in IRC530 400V 0.162 14A its structure. in addition to the well established character- istics of the HEXFETs, they provide an accurate fraction IRC531 80V 0.162 14A of the drain current as feedback parameters for control and/or protection. Features: Fields of applications include: current mode motorcontrol ; power supplies using flyback or push pull topology; uninter- & +2.5% Sensing Accuracy ruptible power systems; instrumentation; solid state relays; CRT deflection, solenoid and lamp drive circuits. Repetitive Avalanche Ratings The HEXFET technology is the key to International Recti- , \ fier's advanced line of power MOSFET transistors. The MM Dynamic dv/dt Rating efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined i Simple Drive Requirements with high transconductance and great device ruggedness. DEVICES a 4 wg oa ec } Qo z Bch Conforms to Outline TO-220 CASE STYLE AND DIMENSIONS (IR H-7)* 457 (0 180) TZ OM} HEB YO on [ee | 40.54 (0.415) MAX. PS 45,09 (0.594) 4 \4 MAX. 1 Gate 2 CURRENT SENSE ~ TT 4 RECIIN SOURCE 5 SOURCE 8.89 (0.350 SO MAX. SN. yao lt I me ot 196 (0077) 145 (0067) For Additional Outlines See Page E-12 Dimensions in Millimeters and (Inches) This data sheet applies to product with batch codes that begin with a digit, ie. 2A3B E-3IRC530, IRC531 Devices Absolute Maximum Ratings LiE D J 44S554S2e g008905 i INTERNATIONAL RECTIFIER T-39-11 Parameter IRC530, IRC531 Units Ip @ Tg = 26C Continuous Drain Current 4 A Ip @ Tc = 100C Continuous Drain Current 10 A !pM Pulsed Drain Current 56 A Pp @ Tc = 25C Max. Power Dissipation 79 Ww Linear Derating Factor 0.53 WIK Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 69 mJ (See Fig. 14) lar Avalanche Current 14 A (Repetitive or Non-Repetitive) (See Ear) Ear Repetitive Avalanche Energy 79 mJ {See lap) dvidt Peak Diode Recovery dvidt @ 5.5 Vins {See Fig. 17) Ty Operating Junction 55 to 175 C Ts1G Storage Temperature Range Lead Temperature 300 {0.063 in. (1.6mm) from case for 10s} Cc Electrical Characteristics @ 1, = 25C ( Unless Otherwise Specified) Parameter Type | Min. Typ. Max. | Units Test Conditions BVpgg_Drain-to-Source Breakdown Voltage IRC530} 100 _ - Vv Vas = OV. Ip = 250 pA IRFS31 | 80 Ri Static Drain-to-Source ALL - 012 016 2 Vag = 10V, Ip = 83A DSton) On-State Resistance gs D Ipfon) -_ On-State Drain Current 1} ALL 14 - - A Vos > Ipton) X Rosten) Max. Ves = 10V Vasith Gate Threshold Voltage ALL 2.0 - 40 Vv Vps = Veg: Ip = 250pA fs Forward Transconductence ALL 47 7A - Siu) | Vpg = 50V, Ips = 8.3A Ipsg Zero Gate Voltage Drain Current ALL = = 260 pA Vos = Max. Rating, Vgg = 0V - - 1000 Vpg = 0.8 x Max. Rating Veg = OV Ty = 150C \ggg _ Gate-to-Source Leakage Forward ALL - - 500 nA | Veg = 20V Igsg Gate-to-Source Leakage Reverse ALL - - -500 | nA | Veg = 20V Qg Total Gate Charge ALL - Ww 26 nc | Veg = 10V. Ip = 144 Vps = 0.8 x Max. Rating Qgs Gate-to-Source Charge ALL - a7 65 nC i see Fig. 16 Qoq Gate-to-Drain ("Miller") Charge ALL - 70 1 nc (independent of operating temperature) tdion) __ Turr-On Delay Time ALL - 9.5 14 ns Vpp = 50V, Ip = 14A, Rg = 122 tr Rise Time ALL - 42 63 ns Rp = 3.60 tdloff Turn-Off Delay Tima ALL - 22 3 ns Sea Fig. 15 t Fall Time ALL - 25 38 ns {Independent of operating temperature) tp Internal Drain inductance ALL - 45 - nH Measured from the drain Modified HEXSense symbol lead, 6mm (0.26 in.) from | showing the internal package to center of dia, inductances. t) lg Internal Source Inductance ALL - 75 - nH Measured from the source ye lead, 6mm (0.25 in} from . pene to source bonding 6 Ganeut $ SENSE Cisg Input Capacitance ALL ~ 650 - pF Vas = 0V. Vps = 26V Cogs dOOuttput Capacitance ALL - 240 - pF f = 1.0 MHz Cisg Reverse Transfer Capacitance ALL - 4 ~ pF See Fig. 10 E-4ALE D i 4855452 gooadob ? i IRC530, IRC531 Devices T-39-11 INTERNATIONAL RECTIFIER Source-Drain Diode Ratings and Characteristics Parameter Type | Min. Typ. | Max. | Units Test Conditions Is Continuous Source Current ALL - - 14 A Modified HEXSense symbol showing the integral (Body Diode} Reverse p-n junction rectifier. 0 KELVIN ism Pulsed Source Current ALL - - 56 A SoUREE (Bady Diode) & <7 Cuanent SENSE Vsp __ Diode Forward Voltage ALL | | 25 Vs | Ty = 28C, ig = 144, Veg = OV try Reverse Recovery Time ALL 66 140 310 ns Ty = 26C, Ip = 14A, diddt = 100 Alps Orr Reverse Recovery Charge ALL 0.22 0.49 1.2 rey ton Forward Turn-On Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. Current Sense Characteristics @ 1, = 25c (Unless Otherwise Noted) Parameter Type | Min. Typ. | Max, | Units Test Conditions f Current Sensing Ratio ALL 1430 | 1465 | 1500 - Ves = 10, Ip = 144 See Figure 21 for test circuit, See Figure 18, 19, and 20 for typ. behavior. Output Capacitance of Sensing Cells ALL - 9.0 pF Ves =, Yps = 26V, f = 1 MHz See Figure 22 for test circuit. oss Thermal Resistance Rihuc Junction-to-Case ALL _ - 19 |KW Rihcs Case-to-Sink ALL - 0.50 | KAW ] Mounting surface flat, smooth, and greased Rthga Junction-to-Ambient ALL - - 80 | KAW } Typical socket mount @ Repetitive Rating; Pulse width limited by Isp = 14A, difdt = 140Alps, KAW = CWW maximum junction temperature (see figure 5) Vpp = BYpsg. Ty < 175C WiK = Wec Refer to current HEXFET reliability report Suggested Rg = 120 Vpp = 26V, Stating Ty = 25C, @ Yop, aH, Reg = 250, > @ Pulse width < 300 us; Duty Cycle = 2% Peak I = 14A, 102 Vpg 2 50V tN 10 DRAIN CURRENT (AMPERES) a Ip. Ip. DRAIN CURRENT (AMPERES) 2 410 1 5 5 2 4v 0 0.1 0 10 20 30 40 50 0 2 4 6 8 10 Vog: ORAIN-TO-SQURCE VOLTAGE (VOLTS) Vgg GATE-TO-SOURCGE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics qtune o Bp vassuse coos? 9 I IRC530, IRC531 Devices INTERNATIONAL RECTIFIER T-39-11 25 403 5 IN THI Fos (ON) 2 @ 20 a w WwW 402 wi th z z = 2 b&b 15 _ 2 z 5 ir W 40 x c 2 D 40 os z Zz a a x z ? ao a 4 a - Ht 5 Lf Tp=asC 2]T j=175C av INGLE PULSE Q . 0.0 1.0 2.0 3.0 4.0 5.0 0.4 1 2 5 40 2 5 492 2 5 4103 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area > oO TL ets }_ta Oo e NOTES: 1. DUTY FACTOR, D=t4/tg 2. PEAK Ty=Pom x ZehJc + To 4074 4073 4072 0.4 4 ty, RECTANGULAR PULSE DURATION (SECONDS) THERMAL RESPONSE (Ztnyc) a oO { tw = ao 10 Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationBVogs. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1LE O a 485suse gooads a i ; IRC530, IRC531 Devices INTERNATIONAL RECTIFIER T-39-11 = Oo Ty=175C TRANSCONDUCTANCE (SIEMENS) Gro: T =25C Ipq. REVERSE DRAIN CURRENT (AMPERES) 0.4 0 5 10 i5 20 25 0.0 0.4 0.8 1.2 1.6 2.0 Ip. ORAIN CURRENT (AMPERES) Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1. 3. Ww QO z zt Ke n 4. Hoa, td x Zz Oo 4. Wood, SN OH w 4 Pz QO. Ft. 2zZ Zz _ x a 0. = 9. 2 wn 0.75 0.0 3 Veg = 10V "=60-40-20 0 20 40 60 80 100 120 140 160 180 "=60-40-20 0 20 40 60 80 100 120 140 160 180 Ty JUNCTION TEMPERATURE ( C) Ty JUNCTION TEMPERATURE ( C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. TemperatureE D IRC530, IRC531 Devices Lie 0 Bf vassys2 ooosso9 2 ff INTERNATIONAL RECTIFIER T-39-11 4500 = = 20 6s oY" ~ ss = Sgs t Cga Cos SHORTED 3 200 . a9 a = Cys + Cgs Cgg / (gg + Cgql S 16 Cc Cys + gg Wl a < ~ 5 900 42 3 < wi 8 . & & 600 nm 8 a i . e J E < 300 Oo 4 B > FOR TEST CIACUIT SEE FIGURE 16 2 5 10 2 5 102 6 42 18 24 Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg. TOTAL GATE CHARGE (nC) 30 Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 45 ta DRAIN-TO-SOURCE ON RESISTANCE wo Ip. DRAIN CURRENT (AMPERES) a (0. 3 c 2 wn a c QO. 42 24 36 48 60 50 75 100 125 150 175 Ip. ORAIN CURRENT (AMPERES) Te, CASE TEMPERATURE ( 9) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature E-8ALE D a 4ass4s2 gooadio 9 i INTERNATIONAL RECTIFIER VARY 'p TO OBTAIN REQUIRED PEAK 1, i) Vos 4 N _ - _ = Nees ee cere ore eee me Fig. 14b Unclamped Inductive Waveforms Rp Vv + out os vo0 Rg Veg = 10V | | | PULSE WIDTH = 1 us DUTY FACTOR =0.1% Fig. 15a Switching Time Test Circuit sm \ SL Vos Sal NE {d(an) td(off) Fig. 155 Switching Time Waveforms IRC530, IRC531 Devices T-39-11 100 80 60 40 20 Eas. SINGLE PULSE AVALANCHE ENEAGY (mu) PEAK I, = 448 995 50 75 100 125 150 175 STARTING Ty, JUNCTION TEMPERATURE ( c) Fig. 14c Maximum Avalanche Energy Vs. Starting Junction Temperature GATE VOLTAGE CHARGE Fig. 16a Basic Gate Charge Waveform CURRENT REGULATOR sc = |! CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 16b Gate Charge Test Circuit +Vos O (porate UPPLY)CURRENT difdt VOLTAGE LE D i y8SS4S2 0008911 O i INTERNATIONAL RECTIFIER IRC530, IRC531 Devices DRIVER GATE DRIVE p= tw PERIOD * PERIOD ro PW _ CIRCUIT LAYOUT CONSIDERATIONS Vie = + * LOW STRAY INDUCTANCE Yj} Gs = * GROUND PLANE _ 66 LOW LEAKAGE INDUCTANCE a rh our CURRENT TRANSFORMER @| OUT. Ign WAVEFORM wL f o SODY DIODE FORWARD * REVERSE RECOVERY a CURRENT @ | DUT. Vpg WAVEFORM DIODE RECOVERY dvidt o- nN RE-APPLIED oe ae Le FORWARD DROP @) | INDUCTOR CURRENT @ & <4) DRIVER Rg * dwdt CONTROLLED BY Rg DRIVER SAME DEVICE GROUP AS DUT Igp CONTROLLED BY DUTY FACTOR, D Vop li Fig. 17 Peak Diode Recovery dv/dt Test Circuit 1600 1550 1500 SENSE RATIO (r) 1450 1400 -60-40-20 0 20 40 60 80 100 120 140 160 180 Ty JUNCTION TEMPERATURE ( C) Fig. 18 HEXSense Ratio Vs. Junction Temperature 1600 4550 1500 SENSE RATIO (r) 1450 1400 0 5 10 45 20 25 Ip. DRAIN CURRENT (AMPERES) Fig.19 HEXSense Ratio Vs. Drain Current E-10Mle O J yassus2 gogsae 2 i INTERNATIONAL RECTIFIER T-39-11 IRC530, IRC531 Devices 1600 4550 z My ao H 1500 c Ta) w Zz ul a 4450 Mo 1400 007 8 9 10 14 412 y Veg GATE-TO-SOURCE VOLTAGE (VOLTS) My. Mg = HIGH SPEED DIGITAL VOLTMETER Fig. 20 - HEXSense Ratio Vs. Gate Voltage Fig, 21 HEXSense Ratio Test Circult ate a7 eo 620K rege CAPACITANCE a7 METER ca HIGH TERMINAL 620K AAA. VV CAPACITANCE o- METER T LOW TERMINAL Fig. 22 Output Capacitance Test Circult for HEXSense Only E-11IRC530, IRC531 Devices INTERNATIONAL RECTIFIER LIE D Ei 4Y8SS4HYSe OO08913 4 i T-39-11 BT ee L 470 (0 185) (O70) + aon Conforms to Outline TO-220 | ORAIN WwW 278 ae OA NN tera ary ne | | sath | | 12345 546 " an 838 (0 390) Option 007 he 1 J aie gan (| |p 0.415)_,| Conforms to Outline TO-220 457 (0.180) 432 (0.170) 2.78 (0.149) 132 (0.048) el 353 (0.139) 122 (0.048) f- {DIA THRU} J 1509 (0594) t 1473 (0.580) 1498 (0590) 14.48 (0570) 89 (0.250) 1ag2 (0.745) OR) 18.42 (0.725) 123468 Yj I t _] 297 ain 98110092 iryp, | 051 (2020) MEAT O71 (0028) ri fy Q41 (0.016) 1.96 (0077) Fit (0 ae - Lt SS a 145 (ous) YP) L201 (0355) || [1054 (ois) _ | 651 (0335) 1029 (0.405) Option 008 Fig. 23 HEXSense Case Style (H-8) Fig. 24 HEXSense Case Style (H-9) Dimensions in Millimeters and (Inches) ORDERING INFORMATION Part Number | Case Style mL iRC530 x: IRC531 " IRC530-007 - a. IR H-8 LS 1RC531-007 = IRC530-008 IR H-9 iRC531-008 Other lead formings are available upon request. E-12