M35–1/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO –50 V
Collector–Base V oltage V CBO –60 V
Emitter–Base V oltage V EBO –6.0 V
Collector Current — Continuous I C–150 mAdc
Collector power dissipation P C0.2 W
Junction temperature T j150 °C
Storage temperature T stg -55
~
+150 °C
DEVICE MARKING
BC857BRLT1
=G3F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage V (BR)CEO – 50 — — V
(IC = –1 mA)
Emitter–Base Breakdown Voltage V (BR)EBO – 6 — — V
(IE = – 50 µA)
Collector–Base Breakdown V oltage V (BR)CBO – 60 — — V
(IC = – 50 µA)
Collector Cutoff Current I CBO — — – 0.1 µA
(VCB = – 60 V)
Emitter cutoff current I EBO — — – 0.1 µA
(VEB = – 6 V)
Collector-emitter saturation voltage V CE(sat) — — -0.5 V
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio h FE 120 –– 560 ––
(V CE = – 6 V, I C= –1mA)
T ransition frequency f T— 140 –– MHz
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance C ob — 4.0 5.0 pF
(V CB = – 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
QRS
hFE 120~270 180~390 270~560
1
3
2
BC857BRLT1
is LRC prefered Device
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
*