© 2011 IXYS All rights reserved 1 - 3
20110307
GMM 3x100-01X1
IXYS reserves the right to change limits, test conditions and dimensions.
t e n t a t i v e
VDSS = 100 V
ID25 = 90 A
RDSon typ. = 7.5 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon 1) on chip level at TVJ = 25°C
VGS = 10 V TVJ = 125°C
7.5
14
8.5 mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2.5 4.5 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 0.1
1 µA
mA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 65 V; ID = 90 A
90
30
30
nC
nC
nC
td(on)
tr
td(off)
tf
inductive load
VGS = 10 V; VDS = 48 V
ID = 70 A; RG = 33 Ω;
TJ = 125°C
130
95
290
55
ns
ns
ns
ns
Eon
Eoff
Erecoff
0.4
0.4
0.007
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1) VDS = ID·(RDS(on) + 2RPin to Chip)
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 100 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
90
68
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
90
68
A
A
S2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L3+
L2L1
L1+ L2+
L3-L1- L2-
p h a s e - o u t
Recommended replacement: MTI 85WX100GD
© 2011 IXYS All rights reserved 2 - 3
20110307
GMM 3x100-01X1
IXYS reserves the right to change limits, test conditions and dimensions.
t e n t a t i v e
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
75 A
TJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip 1) tbd mW
CPcoupling capacity between shorted
pins and back side metallization
160 pF
Weight 25 g
1) VDS = ID·(RDS(on) + 2RPin to Chip)
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 70 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V
55
0.95
33
ns
µC
A
p h a s e - o u t
© 2011 IXYS All rights reserved 3 - 3
20110307
GMM 3x100-01X1
IXYS reserves the right to change limits, test conditions and dimensions.
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
SMD Standard GMM 3x100-01X1 - SMD GMM 3x100-01X1 Blister 28 509 035
t e n t a t i v e
p h a s e - o u t
