252 Data Sheets
1998 Microwave Databook
FLK012WF
X-Ku Band Power GaAs FETs
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
1.15
-65 to +175
175
Tc = 25¡C
V
V
W
¡C
¡C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed +0.25 and -0.05 mA respectively with
gate resistance of 3000W.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS -6090
-30-
-1.0 -2.0 -3.5
-5 - -
6.0 7.5 -
-26-
19.5 20.5 -
VDS = 5V, IDS =3mA
VDS = 5V, IDS =40mA
VDS = 5V, VGS = 0V
IGS = -3µA
Channel to Case
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
VDS = 3V,
IDS = 20mA (Typ.),
f = 12 GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
hadd
Noise Figure - 2.5 - dBNF
Associated Gain -7- dBGas
Thermal Resistance -65
130 ¡C/W
Rth
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
G.C.P.: Gain Compression Point
CASE STYLE: WF
DESCRIPTION
The FLK012WF is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• High Output Power: P1dB = 20.5dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: hadd = 26%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
2
050 100 150 200 20 4 6 8 10
Case Temperature (¡C) Drain-Source Voltage (V)
Total Power Dissipation (W)
40
20
60
Drain Current (mA)
VGS =0V
-0.5V
-1.5V
-2.0V
-1.0V
Data Sheets 1998 Microwave Databook
253
2.
FLK012WF
X-Ku Band Power GaAs FETs
OUTPUT POWER vs. INPUT POWER
IDS » 0.6 IDSS
f = 14.5GHz
VDS=10V
VDS=8.5V
5 7 9 11 13 15
Input Power (dBm)
22
20
18
16
14
40
20
Output Power (dBm)
hadd
Pout
hadd (%)
254 Data Sheets
1998 Microwave Databook
FLK012WF
X-Ku Band Power GaAs FETs
0
-j250
-j100
-j50
-j25
-j10
+j10
+j25
+j50
+j100
+j250
+90˚
0°
-90˚
180˚
10 25 100 250
8 GHz
S11
S22
S21
S12
9
10
11
12
14
15
16
11
12
13
9
11
14
16
16
15
1413
12
11
10
9
8
0.2 0.1
50W
SCALE FOR |S21 9
8 GHz
10
14
15
16
10
12
15 13
13
SCALE FOR |S21
2.0
1.6
1.2
0.8
0.4
S-PARAMETERS
VDS = 10V, IDS = 40mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
500 .992 -13.0 2.474 167.9 .007 78.0 .797 -8.6
1000 .985 -25.1 2.454 156.7 .014 69.9 .794 -16.2
8000 .804 -173.9 1.566 15.8 .037 -23.4 .760 -119.1
9000 .793 169.8 1.447 -1.7 .035 -28.1 .785 -132.5
10000 .770 154.9 1.335 -18.1 .033 -37.5 .797 -145.4
11000 .755 140.6 1.237 -33.5 .031 -43.7 .804 -158.0
12000 .745 127.3 1.170 -48.6 .030 -51.4 .814 -169.4
13000 .726 113.6 1.129 -64.4 .033 -64.1 .838 -180.0
14000 .684 99.8 1.094 -80.6 .037 -80.4 .864 170.3
15000 .617 83.8 1.078 -97.9 .044 -102.9 .875 159.8
16000 .535 65.7 1.074 -116.4 .056 -126.5 .866 149.0
Data Sheets 1998 Microwave Databook
255
2.
FLK012WF
X-Ku Band Power GaAs FETs
2.5
(0.098)
0.6
(0.024)
8.5±0.2
(0.335)
1.0 Min.
(0.039)
2.5±0.15
(0.098)
0.1±0.05
(0.004)
2-ø1.6±0.01
(0.063)
1.0 Min.
(0.039)
1
2
3
2.5 Max.
(0.098)
0.8±0.1
(0.031)
6.1±0.1
(0.240)
Case Style "WF"
Metal-Ceramic Hermetic Package
1: Gate
2: Source (Flange)
3: Drain
Unit: mm (inches)