DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF147 VHF power MOS transistor Product specification Supersedes data of 2001 May 23 2003 Sep 01 Philips Semiconductors Product specification VHF power MOS transistor BLF147 PINNING - SOT121B FEATURES * High power gain PIN DESCRIPTION * Low intermodulation distortion 1 drain * Easy power control 2 source * Good thermal stability 3 gate * Withstands full load mismatch. 4 source APPLICATIONS * Industrial and military applications in the HF/VHF frequency range. handbook, halfpage 1 DESCRIPTION 4 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the "General" section of the handbook for further information. d g 2 3 MAM267 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) D (%) d3 (dB) d5 (dB) SSB, class-AB 28 28 150 (PEP) >17 >35 <-30 <-30 CW, class-B 108 28 150 typ. 14 typ. 70 - - MODE OF OPERATION WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 01 2 Philips Semiconductors Product specification VHF power MOS transistor BLF147 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 65 V VGS gate-source voltage - 20 V ID drain current (DC) Ptot total power dissipation Tstg Tj - 25 A - 220 W storage temperature -65 150 C junction temperature - 200 C Tmb 25 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W MRA904 102 handbook, halfpage MGP049 300 handbook, halfpage Ptot ID (A) (W) (1) 200 (1) (2) (2) 10 100 1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C. 100 Th (C) (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. 2003 Sep 01 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF147 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 65 - - V IDSS drain-source leakage current VGS = 0; VDS = 28 V - - 5 mA IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 1 A VGSth gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 - 4.5 V VGS gate-source voltage difference of matched pairs ID = 100 mA; VDS = 10 V - - 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 - S RDSon drain-source on-state resistance ID = 8 A; VGS = 10 V - 0.1 0.15 IDSX on-state drain current VGS = 10 V; VDS = 10 V - 37 - A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 450 - pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 360 - pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 55 - pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 01 4 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP050 MGP051 60 0 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) -1 40 -2 -3 20 -4 -5 10-2 0 10-1 1 ID (A) 0 10 5 10 15 VGS (V) 20 VDS = 28 V; valid for Th = 25 to 70 C. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. Fig.5 MGP052 170 Drain current as a function of gate-source voltage; typical values. MRA903 1400 handbook, halfpage handbook, halfpage C (pF) RDSon (m) 150 1200 130 800 110 400 Cis 0 90 0 50 100 Tj ( C) 0 150 20 30 40 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. 2003 Sep 01 10 VDS (V) ID = 8 A; VGS = 10 V. Fig.6 Cos Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF147 MRA902 500 handbook, halfpage Crs (pF) 400 300 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz; unless otherwise specified. PL (W) 20 to 150 (PEP) f (MHz) VDS (V) IDQ (A) Gp (dB) D (%) d3 (dB) (note 2) d5 (dB) (note 2) 28 28 1 >17 typ. 19 >35 typ. 40 <-30 typ. -34 <-30 typ. -40 Notes 1. Optimum load impedance: 2.1 + j0 . 2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 28 MHz at rated load power. 2003 Sep 01 6 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP053 MGP054 60 30 handbook, halfpage handbook, halfpage D (%) Gp (dB) 40 20 20 0 10 100 0 PL (W) PEP 0 200 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.9 Fig.10 Efficiency as a function of load power; typical values. Power gain as a function of load power; typical values. MGP055 -20 MGP056 -20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) -30 -30 -40 -40 -50 -50 -60 -60 0 100 PL (W) PEP 200 0 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.11 Third order intermodulation distortion as a function of load power; typical values. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. 2003 Sep 01 7 Philips Semiconductors Product specification VHF power MOS transistor BLF147 handbook, full pagewidth C8 C1 C2 C10 L7 C9 C3 R1 R2 C11 L4 C5 R5 C6 R3 R4 L5 +VG L6 C7 +VD MGP057 f = 28 MHz. Fig.13 Test circuit for class-AB operation. 8 C15 C13 C4 2003 Sep 01 C12 C14 L2 L1 input 50 L3 D.U.T. output 50 Philips Semiconductors Product specification VHF power MOS transistor BLF147 List of components (see Fig 13). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF C2, C8, C9 multilayer ceramic chip capacitor; note 1 75 pF 2222 809 07015 C4, C5 multilayer ceramic chip capacitor 100 nF C6 multilayer ceramic chip capacitors in 3 x 100 nF parallel C7 electrolytic capacitor 2.2 F, 63 V C10 multilayer ceramic chip capacitor; note 1 100 pF C11, C12 multilayer ceramic chip capacitor; note 1 150 nF C15 multilayer ceramic chip capacitor; note 1 240 pF L1 6 turns enamelled 0.7 mm copper wire 145 nH length 5 mm; int. dia. 6 mm; leads 2 x 5 mm L2, L3 stripline; note 2 41.1 length 13 x 6 mm L4 4 turns enamelled 1.5 mm copper wire 148 nH length 8 mm; int. dia. 10 mm; leads 2 x 5 mm L5, L6 grade 3B Ferroxcube wideband HF choke L7 3 turns enamelled 2.2 mm copper wire 79 nH R1, R2 1 W metal film resistor 19.6 2322 153 51969 R3 0.4 W metal film resistor 10 k 2322 151 71003 R4 0.4 W metal film resistor 1 M 2322 151 71005 R5 1 W metal film resistor 10 2322 153 51009 2222 852 47104 2222 852 47104 4312 020 36642 length 8 mm; int. dia. 8 mm; leads 2 x 5 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm. 2003 Sep 01 9 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP058 30 MGP059 10 handbook, halfpage handbook, halfpage GP (dB) Zi () 20 5 ri 10 0 xi -5 0 0 10 20 30 f (MHz) 0 10 20 f (MHz) 30 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 . Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 . Fig.14 Power gain as a function of frequency; typical values. Fig.15 Input impedance as a function of frequency (series components); typical values. MGP061 4 MGP062 3 handbook, halfpage handbook, halfpage Zi () ZL () 2 2 ri RL 0 1 xi -2 -4 XL 0 0 50 100 150 f (MHz) -1 200 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Fig.16 Input impedance as a function of frequency (series components); typical values. Fig.17 Load impedance as a function of frequency (series components); typical values. 2003 Sep 01 10 Philips Semiconductors Product specification VHF power MOS transistor BLF147 MGP060 30 handbook, halfpage Gp (dB) 20 10 0 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Fig.18 Power gain as a function of frequency; typical values. 2003 Sep 01 11 Philips Semiconductors Product specification VHF power MOS transistor BLF147 BLF147 scattering parameters VDS = 28 V; ID = 1000 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| |s21| |s12| |s22| 5 0.91 -170.00 23.90 93.40 0.01 5.80 0.88 -171.20 10 0.91 -174.60 12.25 89.40 0.01 3.60 0.89 -177.20 20 0.92 -177.40 5.94 81.00 0.01 5.40 0.83 -179.60 30 0.92 -178.40 3.87 79.10 0.01 8.90 0.86 -178.90 40 0.92 -178.80 2.84 75.70 0.01 12.00 0.85 -178.60 50 0.92 -178.80 2.26 73.30 0.01 16.90 0.87 -176.90 60 0.92 -179.00 1.88 69.80 0.01 20.30 0.90 -177.30 70 0.93 -179.20 1.58 66.20 0.01 24.00 0.90 -178.10 80 0.93 -179.60 1.36 63.20 0.01 28.80 0.90 -178.40 90 0.93 -179.70 1.19 60.40 0.01 34.20 0.90 -178.60 100 0.94 -179.70 1.05 57.00 0.01 39.30 0.90 -179.40 125 0.95 179.50 0.77 49.30 0.01 52.30 0.88 179.20 150 0.95 179.00 0.60 45.80 0.01 64.90 0.91 -179.50 175 0.96 178.10 0.49 41.50 0.02 72.40 0.95 179.80 200 0.96 177.50 0.40 36.80 0.02 75.80 0.94 177.70 250 0.97 175.80 0.28 33.20 0.03 82.30 0.95 176.20 300 0.98 174.20 0.22 30.10 0.03 83.00 0.96 173.60 350 0.98 172.70 0.17 31.00 0.04 85.00 0.97 171.90 400 0.98 171.10 0.14 32.40 0.05 84.90 0.97 169.50 450 0.98 169.50 0.12 36.10 0.05 85.90 0.97 167.70 500 0.98 167.90 0.11 39.90 0.06 84.30 0.98 165.50 600 0.98 164.80 0.10 50.20 0.07 83.20 0.97 161.50 700 0.98 161.60 0.10 57.90 0.09 81.70 0.97 157.50 800 0.98 158.20 0.11 63.70 0.10 81.00 0.97 153.50 900 0.97 154.60 0.13 67.20 0.12 79.50 0.97 149.30 1000 0.97 151.10 0.14 70.20 0.14 78.80 0.96 144.90 Note 1. For more extensive S-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast. 2003 Sep 01 12 Philips Semiconductors Product specification VHF power MOS transistor BLF147 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION F H p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.25 0.51 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 0.130 0.120 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.01 0.02 D D1 12.86 12.83 12.59 12.57 45 REFERENCES IEC JEDEC EIAJ SOT121B 2003 Sep 01 EUROPEAN PROJECTION ISSUE DATE 99-03-29 13 Philips Semiconductors Product specification VHF power MOS transistor BLF147 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 01 14 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 01 Document order number: 9397 750 11593