DATA SH EET
Product specification
Supersedes data of 2001 May 23 2003 Sep 01
DISCRETE SEMICONDUCTORS
BLF147
VHF power MOS transistor
M3D060
2003 Sep 01 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
FEATURES
•High power gain
•Low intermodulation distortion
•Easy power control
•Good thermal stability
•Withstands full load mismatch.
APPLICATIONS
•Industrial and military applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
packagewithaceramiccap.Allleadsareisolatedfromthe
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
PINNING - SOT121B
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM267
14
32
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) d3
(dB) d5
(dB)
SSB, class-AB 28 28 150 (PEP) >17 >35 <−30 <−30
CW, class-B 108 28 150 typ. 14 typ. 70 −−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 01 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −25 A
Ptot total power dissipation Tmb ≤25 °C−220 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base 0.8 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
1
10
102
110
V
DS (V)
ID
(A)
102
(1)
MRA904
(2)
Fig.3 Power derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
300
200
100
050 100 150
MGP049
Ptot
(W)
Th (°C)
(1)
(2)
2003 Sep 01 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID= 100 mA; VGS =0 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−5mA
I
GSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 200 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
matched pairs ID= 100 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 8 A; VDS =10V 5 7.5 −S
R
DSon drain-source on-state resistance ID= 8 A; VGS =10V −0.1 0.15 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −37 −A
Cis input capacitance VGS = 0; VDS =28V; f=1MHz −450 −pF
Cos output capacitance VGS = 0; VDS =28V; f=1MHz −360 −pF
Crs feedback capacitance VGS = 0; VDS =28V; f=1MHz −55 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Sep 01 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.4 Temperature coefficient of gate-source
voltageasafunctionof draincurrent; typical
values.
VDS = 28 V; valid for Th=25to70°C.
handbook, halfpage
0
−5
MGP050
10−111010−2
−4
−3
−2
−1
T.C.
(mV/K)
ID (A)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS =10V.
handbook, halfpage
0
60
40
20
0510 2015
MGP051
VGS (V)
ID
(A)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
ID= 8 A; VGS =10V.
handbook, halfpage
0 50 100 150
170
150
110
90
130
MGP052
RDSon
(mΩ)
Tj ( C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
400
800
1200
1400
01020 V
DS (V)
C
(pF)
Cis
Cos
30 40
MRA903
2003 Sep 01 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
100
200
300
400
500
01020
C
rs
(pF)
30 VDS (V) 40
MRA902
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB circuit.
Th=25°C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz; unless otherwise specified.
Notes
1. Optimum load impedance: 2.1 + j0 Ω.
2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 28 V; f = 28 MHz at rated load power.
PL
(W) f
(MHz) VDS
(V) IDQ
(A) Gp
(dB) ηD
(%)
d3
(dB)
(note 2)
d5
(dB)
(note 2)
20 to 150 (PEP) 28 28 1 >17
typ. 19 >35
typ. 40 <−30
typ. −34 <−30
typ. −40
2003 Sep 01 7
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.9 Power gain as a function of load power;
typical values.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0 200
30
10
MGP053
20
100 PL (W) PEP
Gp
(dB)
Fig.10 Efficiency as a function of load power;
typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
60
40
20
0100 200
MGP054
ηD
(%)
PL (W) PEP
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−30
−40
−50
−60 100 200
MGP055
d3
(dB)
PL (W) PEP
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−30
−40
−60
−50
100 200
MGP056
d5
(dB)
PL (W) PEP
2003 Sep 01 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.13 Test circuit for class-AB operation.
f = 28 MHz.
handbook, full pagewidth
MGP057
input
50 Ω
C1
C4
C5
C7
L1 L2 D.U.T. L3 L7
L4
R2R1
R3R4
C3
+VG
C2
C13
C9
C8
C11
C10 C12
C15
+VD
C14
L6L5
R5 C6
output
50 Ω
2003 Sep 01 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
List of components (see Fig 13).
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C8, C9 multilayer ceramic chip capacitor;
note 1 75 pF
C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C6 multilayer ceramic chip capacitors in
parallel 3×100 nF 2222 852 47104
C7 electrolytic capacitor 2.2 µF, 63 V
C10 multilayer ceramic chip capacitor;
note 1 100 pF
C11, C12 multilayer ceramic chip capacitor;
note 1 150 nF
C15 multilayer ceramic chip capacitor;
note 1 240 pF
L1 6 turns enamelled 0.7 mm copper
wire 145 nH length 5 mm;
int. dia. 6 mm;
leads 2 ×5mm
L2, L3 stripline; note 2 41.1 Ωlength 13 ×6mm
L4 4 turns enamelled 1.5 mm copper
wire 148 nH length 8 mm;
int. dia. 10 mm;
leads 2 ×5mm
L5, L6 grade 3B Ferroxcube wideband HF
choke 4312 020 36642
L7 3 turns enamelled 2.2 mm copper
wire 79 nH length 8 mm;
int. dia. 8 mm;
leads 2 ×5mm
R1, R2 1 W metal film resistor 19.6 Ω2322 153 51969
R3 0.4 W metal film resistor 10 kΩ2322 151 71003
R4 0.4 W metal film resistor 1 MΩ2322 151 71005
R5 1 W metal film resistor 10 Ω2322 153 51009
2003 Sep 01 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.14 Power gain as a function of frequency;
typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.
handbook, halfpage
0
30
20
10
010 20 30
MGP058
GP
(dB)
f (MHz)
Fig.15 Input impedance as a function of frequency
(series components); typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.
handbook, halfpage
0
10
5
0
−510 20
xi
ri
30
MGP059
Zi
(Ω)
f (MHz)
Fig.16 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS =28V;I
DQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0 50 100 200
4
2
−2
−4
0
150
ri
xi
MGP061
Zi
(Ω)
f (MHz)
Fig.17 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0 50 100 200
3
2
0
−1
1
150
RL
XL
MGP062
ZL
(Ω)
f (MHz)
2003 Sep 01 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.18 Power gain as a function of frequency;
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0
30
20
10
050 100 200150
MGP060
f (MHz)
Gp
(dB)
2003 Sep 01 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
BLF147 scattering parameters
VDS = 28 V; ID= 1000 mA; note 1
Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.91 −170.00 23.90 93.40 0.01 5.80 0.88 −171.20
10 0.91 −174.60 12.25 89.40 0.01 3.60 0.89 −177.20
20 0.92 −177.40 5.94 81.00 0.01 5.40 0.83 −179.60
30 0.92 −178.40 3.87 79.10 0.01 8.90 0.86 −178.90
40 0.92 −178.80 2.84 75.70 0.01 12.00 0.85 −178.60
50 0.92 −178.80 2.26 73.30 0.01 16.90 0.87 −176.90
60 0.92 −179.00 1.88 69.80 0.01 20.30 0.90 −177.30
70 0.93 −179.20 1.58 66.20 0.01 24.00 0.90 −178.10
80 0.93 −179.60 1.36 63.20 0.01 28.80 0.90 −178.40
90 0.93 −179.70 1.19 60.40 0.01 34.20 0.90 −178.60
100 0.94 −179.70 1.05 57.00 0.01 39.30 0.90 −179.40
125 0.95 179.50 0.77 49.30 0.01 52.30 0.88 179.20
150 0.95 179.00 0.60 45.80 0.01 64.90 0.91 −179.50
175 0.96 178.10 0.49 41.50 0.02 72.40 0.95 179.80
200 0.96 177.50 0.40 36.80 0.02 75.80 0.94 177.70
250 0.97 175.80 0.28 33.20 0.03 82.30 0.95 176.20
300 0.98 174.20 0.22 30.10 0.03 83.00 0.96 173.60
350 0.98 172.70 0.17 31.00 0.04 85.00 0.97 171.90
400 0.98 171.10 0.14 32.40 0.05 84.90 0.97 169.50
450 0.98 169.50 0.12 36.10 0.05 85.90 0.97 167.70
500 0.98 167.90 0.11 39.90 0.06 84.30 0.98 165.50
600 0.98 164.80 0.10 50.20 0.07 83.20 0.97 161.50
700 0.98 161.60 0.10 57.90 0.09 81.70 0.97 157.50
800 0.98 158.20 0.11 63.70 0.10 81.00 0.97 153.50
900 0.97 154.60 0.13 67.20 0.12 79.50 0.97 149.30
1000 0.97 151.10 0.14 70.20 0.14 78.80 0.96 144.90
2003 Sep 01 13
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT121B 99-03-29
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B
12
43
U
3
D
1
U
2
H
H
b
Q
D
U
1
q
A
F
c
p
w
1
MMM
MM
w
2
B
C
C
A
AB
α
0.25
UNIT A
mm
Db
5.82
5.56 0.16
0.10 12.86
12.59 12.83
12.57 28.45
25.52 3.30
3.05 6.48
6.22
7.27
6.17
cD1U3
U2
12.32
12.06 0.51
w1w2
45°
αU1
24.90
24.63
Q
4.45
3.91
q
18.42
F
2.67
2.41
0.01
inches 0.229
0.219 0.006
0.004 0.506
0.496 0.505
0.495 1.120
1.005 0.130
0.120 0.255
0.245
0.286
0.243 0.485
0.475 0.02
0.98
0.97
0.175
0.154 0.725
0.105
0.095
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Sep 01 14
Philips Semiconductors Product specification
VHF power MOS transistor BLF147
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditionsabove those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 01 Document order number: 9397 750 11593
