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KSD-T0C007-001 2
STC8050N
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO 25 V
Emitter-base voltage VEBO 6 V
Collector current IC 800 mA
Emitter current IE -800 mA
Collector power dissipation PC 500 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=1mA, IB=0 25 - - V
Collector cut-off current ICBO V
CB=30V, IE=0 - - 50 nA
Emitter cut-off current IEBO V
EB=6V, IC=0 - - 50 nA
DC current gain hFE* V
CE=1V, IC=50mA 85 - 300 -
Collector-emitter saturation voltage VCE(sat) I
C=500mA, IB=50mA - - 0.5 V
Base-emitter voltage VBE V
CE=1V, IC=500mA - 0.85 1.2 V
Transition frequency fT V
CE=5V, IC=10mA - 180 - MHz
Collector output capacitance Cob V
CB=10V, IE=0 - 19 - pF
* : hFE Rank / B : 85~160, C : 120~200, D : 160~300