SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
COMPLEMENTARY TYPE FMMT593
PARTMARKING DETAIL 493
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC1A
Peak Pulse Current ICM 2A
Base Current IB200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 120 V IC=100µA
VCEO(sus) 100 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 100 nA VCB
=100V
Collector Cut-Off Current ICES 100 nA VCES=100V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Saturation Voltages VCE(sat) 0.3
0.6
V
V
IC=500mA, IB
=50mA
IC=1A, IB
=100mA
VBE(sat) 1.15 V IC=1A, IB
=100mA
Base-Emitter
Turn On Voltage
VBE(on) 1.0 V IC=1A, VCE
=10V
Static Forward Current
Transfer Ratio
hFE 100
100
60
20
300
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
Transition Frequency fT150 MHz IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo 10 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT493
C
B
E
SOT23
FMMT493
3 - 120 3 - 119
V
CE(sat)
-(V)
10A1A10mA 100mA
1mA
-55 ° C
+25 ° C
+100 ° C
I
C
/I
B
=10
VCE(sat) v IC
I
C
-Collector Current
I
C
-Collector Current
VBE(sat) v IC
V
BE(sat)
- (V)
0
0.2
100mA10mA
0.4
0.6
0.8
1.0
10A1A
hFE V IC
I
C
-Collector Current
1mA 100mA10mA 10A1A
h
FE
- Typical Gain
40
0
120
80
160
10mA
1mA
I
C
-Collector Current
VBE(on) v IC
100mA 1A 10A
V
BE(on)
- (V)
0.6
0.8
1.0
0.4
0.2
0
I
C
-Collector Current
VCE(sat) v IC
V
CE(sat)
-(V)
1mA
0
0.1
100mA10mA
+25 ° C
0.2
0.3
0.4
I
C
/I
B
=10
10A1A
0.4
+100 °C
-55 ° C
+25 °C
+100 ° C
-55 ° C
+25 ° C
-55 ° C
+25 ° C
+100 ° C
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
I
C
-Collector Current (A)
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1 10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I
C
/I
B
=50
200
240
280
0.001
TYPICAL CHARACTERISTICS
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
COMPLEMENTARY TYPE FMMT593
PARTMARKING DETAIL 493
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC1A
Peak Pulse Current ICM 2A
Base Current IB200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 120 V IC=100µA
VCEO(sus) 100 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 100 nA VCB
=100V
Collector Cut-Off Current ICES 100 nA VCES=100V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Saturation Voltages VCE(sat) 0.3
0.6
V
V
IC=500mA, IB
=50mA
IC=1A, IB
=100mA
VBE(sat) 1.15 V IC=1A, IB
=100mA
Base-Emitter
Turn On Voltage
VBE(on) 1.0 V IC=1A, VCE
=10V
Static Forward Current
Transfer Ratio
hFE 100
100
60
20
300
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
Transition Frequency fT150 MHz IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo 10 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT493
C
B
E
SOT23
FMMT493
3 - 120 3 - 119
V
CE(sat)
-(V)
10A1A10mA 100mA
1mA
-55 ° C
+25 ° C
+100 ° C
I
C
/I
B
=10
VCE(sat) v IC
I
C
-Collector Current
I
C
-Collector Current
VBE(sat) v IC
V
BE(sat)
- (V)
0
0.2
100mA10mA
0.4
0.6
0.8
1.0
10A1A
hFE V IC
I
C
-Collector Current
1mA 100mA10mA 10A1A
h
FE
- Typical Gain
40
0
120
80
160
10mA
1mA
I
C
-Collector Current
VBE(on) v IC
100mA 1A 10A
V
BE(on)
- (V)
0.6
0.8
1.0
0.4
0.2
0
I
C
-Collector Current
VCE(sat) v IC
V
CE(sat)
-(V)
1mA
0
0.1
100mA10mA
+25 ° C
0.2
0.3
0.4
I
C
/I
B
=10
10A1A
0.4
+100 °C
-55 ° C
+25 °C
+100 ° C
-55 ° C
+25 ° C
-55 ° C
+25 ° C
+100 ° C
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
I
C
-Collector Current (A)
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1 10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I
C
/I
B
=50
200
240
280
0.001
TYPICAL CHARACTERISTICS
