SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
COMPLEMENTARY TYPE FMMT493
PARTMARKING DETAIL - 593
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Base Current IB-200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -120 V IC=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -100 nA VCB
=-100V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector-Emitter Cut-Off Current ICES -100 nA VCES
=-100V
Emitter Saturation
Voltages
VCE(sat) -0.2
-0.3
V
V
IC=-250mA,IB=-25mA*
IC=-500mA IB=-50mA*
VBE(sat) -1.1 V IC=-500mA,IB=-50mA*
Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1mA, VCE
=-5V*
Static Forward Current Transfer Ratio hFE 100
100
100
50
300
IC=-1mA, VCE
=-5V
IC=-250mA,VCE
=-5V*
IC=-500mA, VCE
=-5V*
IC=-1A, VCE
=-5V,
Transition Frequency fT50 MHz IC=-50mA, VCE
=-10V
f=100MHz
Output Capacitance Cobo 5pFV
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT593
C
B
E
3 - 141
FMMT593
3 - 142
10A
1A10mA 100mA
1mA
-55 °C
+25 °C
+100 °C
I
A
/I
B
=10
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
VBE(sat) v IC
0
0.2
100mA10mA
0.4
0.6
0.8
1.0
10A1A
hFE V IC
IC-Collector Current
1mA 100mA10mA 10A
1A
100
0
300
200
400
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA 1A 10A
0.6
0.8
1.0
0.4
0.2
0
IC-Collector Current
VCE(sat) v IC
1mA
0
0.1
100mA10mA
+25°C
0.2
0.3
0.4
I
C
/I
B
=10
10A
1A
0.4
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C
+100 °C
I
C
/I
B
=10
V
CE
=5V
V
CE
=5V
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1V 10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0
0.1
0.3
0.2
1mA
0.01
I
C
/I
B
=50
0.001
TYPICAL CHARACTERISTICS
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
COMPLEMENTARY TYPE FMMT493
PARTMARKING DETAIL - 593
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Base Current IB-200 mA
Power Dissipation at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -120 V IC=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -100 nA VCB
=-100V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector-Emitter Cut-Off Current ICES -100 nA VCES
=-100V
Emitter Saturation
Voltages
VCE(sat) -0.2
-0.3
V
V
IC=-250mA,IB=-25mA*
IC=-500mA IB=-50mA*
VBE(sat) -1.1 V IC=-500mA,IB=-50mA*
Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1mA, VCE
=-5V*
Static Forward Current Transfer Ratio hFE 100
100
100
50
300
IC=-1mA, VCE
=-5V
IC=-250mA,VCE
=-5V*
IC=-500mA, VCE
=-5V*
IC=-1A, VCE
=-5V,
Transition Frequency fT50 MHz IC=-50mA, VCE
=-10V
f=100MHz
Output Capacitance Cobo 5pFV
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT593
C
B
E
3 - 141
FMMT593
3 - 142
10A
1A10mA 100mA
1mA
-55 °C
+25 °C
+100 °C
I
A
/I
B
=10
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
VBE(sat) v IC
0
0.2
100mA10mA
0.4
0.6
0.8
1.0
10A1A
hFE V IC
IC-Collector Current
1mA 100mA10mA 10A
1A
100
0
300
200
400
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA 1A 10A
0.6
0.8
1.0
0.4
0.2
0
IC-Collector Current
VCE(sat) v IC
1mA
0
0.1
100mA10mA
+25°C
0.2
0.3
0.4
I
C
/I
B
=10
10A
1A
0.4
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C
+100 °C
I
C
/I
B
=10
V
CE
=5V
V
CE
=5V
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1V 10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0
0.1
0.3
0.2
1mA
0.01
I
C
/I
B
=50
0.001
TYPICAL CHARACTERISTICS
