2SC2383
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92MOD
Features
• Capable of 0.9Watts of Power Dissipation.
• Collector-current 1.0A
• Collector-base Voltage 160V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0) 160 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 160 Vdc
V(BR)EBO Emitter-Base Voltage
(IE=10uAdc, IC=0) 6.0 Vdc
ICBO Collector Cutoff Current
(VCB=150Vdc, IE=0) 1.0 uAdc
ICER Collector Cutoff Current
(VCB=150Vdc, REB=10m OHM) 10 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0) 1.0 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=200mAdc, VCE=5.0Vdc) 60 320
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc) 1.0 Vdc
VBE Base-Emitter Voltage
(IC=5.0mAdc, VCE=5.0Vdc) 0.75 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=200mAdc, VCE=5.0Vdc ) 20 MHz
CLASSIFICATION OF HFE (1)
Rank R O Y
Range 60-120 100-200 160-320
A
B
C
D
E
FG
H
I
J
KM
NL
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .030 --- .750
B --- .039 --- 1.00
C --- .031 --- .80
D --- .024 --- 0.60
E --- .201 --- 5.10
F .050 1.27
G .050 1.27
H .100 2.54
I .039 1.00
J --- .087 --- 2.20
K --- .024 --- .60
L --- .323 --- 8.20
M --- .413 --- 10.50
N --- .161 --- 4.10
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Revision: 2 2003/04/30
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