MCC Features Capable of 0.9Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 160V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92MOD Electrical Characteristics @ 25OC Unless Otherwise Specified Parameter Min Max Units OFF CHARACTERISTICS V(BR)EBO ICBO ICER IEBO 160 Vdc 160 Vdc 6.0 Vdc 1.0 uAdc 10 uAdc 1.0 uAdc L V(BR)CBO E Collector-Emitter Breakdown Voltage (IC=10mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Emitter-Base Voltage (IE =10uAdc, IC=0) Collector Cutoff Current (VCB=150Vdc, IE =0) Collector Cutoff Current (VCB=150Vdc, REB=10m OHM) Emitter Cutoff Current (VEB =6.0Vdc, IC=0) A B C D F ON CHARACTERISTICS VCE(sat) VBE H DC Current Gain (IC=200mAdc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Voltage (IC=5.0mAdc, V CE=5.0Vdc) 60 320 1.0 Vdc 0.75 Vdc SMALL-SIGNAL CHARACTERISTICS fT DIMENSIONS Transistor Frequency (IC=200mAdc, V CE=5.0Vdc ) 20 MHz CLASSIFICATION OF HFE (1) Rank Range R 60-120 G N hFE(1) M V(BR)CEO I J Symbol K * * * * 2SC2383 omponents 20736 Marilla Street Chatsworth !"# $ % !"# O 100-200 Y 160-320 DIM A B C D E F G H I J K L M N INCHES MIN MAX --.030 --.039 --.031 --.024 --.201 .050 .050 .100 .039 --.087 --.024 --.323 --.413 --.161 MM MIN ----------1.27 1.27 2.54 1.00 ----------- MAX .750 1.00 .80 0.60 5.10 NOTE 2.20 .60 8.20 10.50 4.10 www.mccsemi.com Revision: 2 2003/04/30