BUT100 (R) HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) IE I EM Parameter Emitter Current Emitter Peak Current 7 V 50 A 150 A Base Current 10 A I BM Base Peak Current 30 A P tot Total Dissipation at T c < 25 o C T stg Storage Temperature IB Tj Max. Operating Junction Temperature February 2003 300 W -65 to 200 o C 200 o C 1/4 BUT100 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.58 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CER Collector Cut-off Current (R BE = 5) V CE = V CEV V CE = V CEV T C = 100 o C 1 5 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = V CEV V CE = VCEV T C = 100 o C 1 4 mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) V BE(sat) di c /dt ts tf tc V CEW I C = 0.2 A L = 25mH Emitter-Base Voltage (I C = 0) I E = 50mA Collector-Emitter Saturation Voltage IC IC IC IC = = = = 50A 100A 50A 100A IB IB IB IB = = = = 2.5A 10A 2.5A 10A Base-Emitter Saturation Voltage IC IC IC IC = = = = 50A 100A 50A 100A IB IB IB IB = = = = 2.5A 10A 2.5A 10A Rate of Rise of on-state Collector Current V CC = 100V R C = 0 I B1 = 5A T c = 100 o C T p = 3s INDUCTIVE LOAD Storage time Fall Time Crossover Time V CC = 90V I C = 50A V BB = - 5V R B2 = 1 V clamp = 125 V I B1 = 2.5A L C = 80H T c = 100 o C Maximum Collector Emitter Voltage without Snubber V CC = 90V VBB = - 5V L C = 30H T c = 125 o C I CWoff = 150A I B1 = 10A R B2 = 1 Pulsed: Pulse duration = 3s, duty cycle = 2 % 2/4 Min. 125 V 7 V T c = 100 o C T c = 100 o C 0.9 0.9 1.2 1.5 V V V V T c = 100 o C T c = 100 o C 1.4 2 1.4 2.1 V V V V 180 A/s 2 0.2 0.35 125 s s s V BUT100 TO-3 (version S) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 1.47 1.60 0.058 0.063 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003O 3/4 BUT100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4