R07DS0177EJ0300 Rev.3.00 Page 1 of 6
Sep 29, 2010
Preliminary Datasheet
BCR1AM-12A
Triac
Low Power Use
Features
IT (RMS) : 1 A
VDRM : 600 V
IFGTI , IRGTI, IRGT III : 7 mA
Non-Insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
2
13
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
12
3
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 1.0 A
Commercial frequency, sine full wave
360° conduction, Tc = 56CNote3
Surge on-state current ITSM 10 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 0.41 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 1 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate voltage VGM 6 V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 0.23 g Typical value
Notes: 1. Gate open.
R07DS0177EJ0300
(Previous: REJ03G1248-0200)
Rev.3.00
Sep 29, 2010
BCR1AM-12A Preliminary
R07DS0177EJ0300 Rev.3.00 Page 2 of 6
Sep 29, 2010
Electrical Characteristics
Rated value
Parameter Symbol
Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 0.5 mA Tj = 125C, VDRM applied
On-state voltage VTM — — 1.6 V
Tc = 25C, ITM = 1.5 A,
Instantaneous measurement
V
FGT — — 2.0 V
V
RGT — — 2.0 V
Gate trigger voltageNote2
V
RGT — — 2.0 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 7 mA
I
RGT — — 7 mA
Gate trigger currentNote2
I
RGT — — 7 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.1 — — V Tj = 125C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 50 C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 2 — — V/s Tj = 125C
Notes: 2. Measurement using th e gate trigger characteristics measurement circuit.
3. Case temperature is measure d at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is sho wn in the table bel ow.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR1AM-12A Preliminary
R07DS0177EJ0300 Rev.3.00 Page 3 of 6
Sep 29, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C) × 100 (%)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
0
2510
1
4
2
37 10
2
425374
6
8
10
0
10–1
231005710
123 5710
223 5710
3
101
7
5
3
2
100
7
5
3
2
7
5
3
2
10–2
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
101
103
7
5
3
2
–60 –20 20
102
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
101
2310–1 5710
023 5710
123 5710
2
103
7
5
3
2
102
7
5
3
2
7
5
3
2
100
231025710
323 5710
423 5710
5
Junction to ambient
Junction to case
Tj = 25°C
VGM = 6V
IFGT I
IRGT I
IRGT III
VGD = 0.1V
PG(AV)
= 0.1W
IGM
= 0.5A
PGM =
1W
Typical Example
Typical Example
IFGT I, IRGT I
IRGT III
V
FGT I
, V
RGT I
V
RGT III
BCR1AM-12A Preliminary
R07DS0177EJ0300 Rev.3.00 Page 4 of 6
Sep 29, 2010
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
2.0
1.6
1.2
0.8
0.4
02.00 0.4 0.8 1.2 1.6
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
140–60 –20 20 60 100
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
-1
–40 0 40 80 120
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example
Typical Example
Distribution T
2
+, G–
Typical Example
T
2
+, G+
T
2
–, G–Typical Example
BCR1AM-12A Preliminary
R07DS0177EJ0300 Rev.3.00 Page 5 of 6
Sep 29, 2010
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
37 10
2
4
4
425374
10
1
7
5
3
2
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
4
4
44
10
–1
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example Typical Example
Tj = 125°C
I Quadrant
III Quadrant
Typical Example
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 1A
τ = 500μs
V
D
= 200V
III Quadrant
I Quadrant
I
FGT I
I
RGT III
I
RGT I
BCR1AM-12A Preliminary
R07DS0177EJ0300 Rev.3.00 Page 6 of 6
Sep 29, 2010
Package Dimensions
SC-43A 0.23g
MASS[Typ.]
T920PRSS0003EA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
φ5.0Max
4.4
3.6
11.5Min 5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Package Name
TO-92*
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 500 Type name BCR1AM-12A
Lead form Vinyl sack 500 Type name – Lead forming code BCR1AM-12A-A6
Form A8 Taping 2000 Type name – TB BCR1AM-12A-TB
Note : Please confirm the specification about the shipping in detail.
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