© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 8 1Publication Order Number:
MBR6045PT/D
MBR6045PT
SWITCHMODE
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
Pb−Free Packages are Available*
Applications
Power Supply – Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBR6045PT SOT−93 30 Units/Rail
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES
45 VOLTS
3
1
2,4
2
4
1
3MARKING DIAGRAM
AYWWG
MBR6045PT
SOT−93
CASE 340D
STYLE 2
http://onsemi.com
MBR6045PT = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBR6045PTG SOT−93
(Pb−Free) 30 Units/Rail
MBR6045PT
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 125°C) Per Diode
Per Device
IF(AV) 30
60
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz @ TC = 90°C) Per Diode IFRM 60 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rat ed Load Condit i ons Halfwave, Single Phase, 60 Hz) IFSM 500 A
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) IRRM 2.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C
Voltage Rate of Change dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 1.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
(iF = 30 Amps, Tj = 25°C)
(iF = 30 Amps, Tj = 125°C)
(iF = 60 Amps, Tj = 25°C)
vF
0.55
0.51
0.70
0.62
0.55
0.75
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
iR
0.2
35 1.0
50
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
IR, REVERSE CURRENT (mA)
vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1000
100
10
1
0.1
0.01 50403020100
TC = 150°C
TC = 100°C
TC = 25°C
100
10
1100 200 300 400 500 600 700 800
150°C 100°C TC = 25°C
MBR6045PT
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT−93
(TO−218)
CASE 340D−02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
VG
K
SL
U
BQEC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A−−− 20.35 −−− 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L−−− 16.20 −−− 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
123
4
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
MBR6045PT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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