DSA 2 I 100 SB
advanced
Schottky
Symbol Definition R a t i n g s
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
typ. max.
I
FSM
I
R
A
mA
V
75
I
FAV
A
V
F
0.79
R
thJL
25 K/W
V
R
=
T
VJ
=
min.
2
ms (50 Hz), sine
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Decoupling diode
V
RRM
V
100
0.01
T
VJ
V°C=
T
VJ
°C=mA
°C
5
Package:
Part number
V
R
=
I
F
=A
V
T
L
=125°C
P
tot
6W
T
L
°C=
E
AS
tbd mJ
T
VJ
°C=
I
AS
=A;L = µH
I
AR
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
175 °C
-55
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
V
I
V
RRM
FAV
F
=
=
=
100
2
0.65
2
T
VJ
=45°C
100
DSA 2 I 100 SB
V
A
V
100
V100
25
25
t
p
=10
25
max. repetitive rev ers e voltage
reverse current
forward voltage
average forward current
thermal resistance junction to lead*
virtual junction temperature
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repet i t ive aval an che curre n t
Conditions Unit
(Marking on product)
0.65
T
VJ
°C
=25
C
J
85 pF
j
unction capacitance V
R
= V; f = 1 MHz
5T
VJ
=°C
125
125
I
F
=A4T
VJ
=°C
25 V
0.87
I
F
=A2
I
F
=A4V0.75
V
F0
V
T
L
= 175 °C
r
F
Ω
m
SMB (DO-214AA)
threshold voltage
slope resistance for power loss calculation only
25
rectangular, d = 0.5
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
* mounted on 1 inch square PCB
(S2KAB)
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0615
Data according to IEC 60747 and per diode unless otherwise specified
DSA 2 I 100 SB
advanced
I
RMS
A
per pin*
R
thJA
K/W
70
M
D
Nm
mounting torque
T
stg
°C
150
storage temperature -55
Weight g
0.1
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance junction to ambient
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines SMB
(
DO-214AA
)
F
C
N
mounting force with clip
E
A
B
CH
D
FG
Dim.
min max min max
A 4.06 4.57 0.160 0.180
B 3.30 3.94 0.130 0.155
C 1.95 2.20 0.077 0.087
D 2.13 2.44 0.084 0.096
E 5.21 5.59 0.205 0.220
F 0.76 1.52 0.030 0.060
G 0.15 0.31 0.006 0.012
H 2.00 2.20 0.079 0.087
Millimeters Inches
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0615
Data according to IEC 60747 and per diode unless otherwise specified
