|SAMSUNG SEMICONDUCTOR INCT 35 -J LYE D Bf eaeuiue coo703 1 ff KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) * Switching Circuit, Inverter, Interface circuit TO-92 Driver circuit Built in bias Resistor (R=47KQ) * Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symbol Rating Unit > { Collector-Base Voltage Veso 40 Vo: Collector-Emitter Voltage Vceo 40 Vv Emitter-Base Voltage Veso 5 Vo: , Collector Current Ic 100 mA ; j Collector Dissipation Po 300 mW Junction Temperature Tj 150 c , Storage Temperature Tstq ~55~ 150 C i ; ; 1. Emitter 2. Colector 3. Base ELECTRICAL CHARACTERISTICS (T,=25C, Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BV ceo Ic= 100pA, Ie=O 40 Vv Emitter-Emitter Breakdown Voltage BVceo le=1mA, Ip=O 40 Vv Collector Cutoff Current leso Vcp=30V, le=0 0.1 pA DC Current Gain hee Voe= SV, Ic= TMA 100 600 Collector-Emitter Saturation Voltage. | Vce(sat) | te-=10mA, le=1mA 0.3 Vv Output Capacitance Cob Vea=10V, le=0 3.7 pF f=1MHz Current Gain-Bandwidth Product fy Vce=10V, lb=5mA 250 MHz Input Resistor R 32 47 62 KQ Equivalent Circuit Collector (Output) Base (Input Emitter (Gndj ce SAMSUNG SEMICONDUCTOR 306