BUT11A
NPN Silicon
Power Transistors
Features
• High voltage, high speed NPN power transistors.
• With TO-220 package
• Intended for use in converters, inverters, switching regulators, motor
control systems.
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 450 V
VCBO Collector-Base Voltage 1000 V
VEBO Emitter to Base Voltage 9.0 V
ICP Peak Collector Current 10 A
IC Collector Current 5.0 A
PC Collector power dissipation 100 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) 450 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=1000Vdc,IE=0) --- 1.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=9.0Vdc, IC=0) --- 10 mAdc
ON CHARACTERISTICS
hFE-1 Forward Current Transfer ratio
(IC=5.0mAdc, VCE=5.0Vdc) 10 35 ---
hFE-2 Forward Current Transfer ratio
(IC=500mAdc, VCE=5.0Vdc) 10 35 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=2.5Adc, IB=0.5Adc) --- 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=2.5Adc, IB=0.5Adc) --- 1.3 Vdc
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
www.mccsemi.com
Revision: 1 2004/12/13
omponents
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