Symbol Parameter Min. Max. Units
VBHigh Side Floating Supply Voltage -0.3 VS + 20
VSHigh Side Floating Supply Offset Voltage -5 400
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VCC Logic Supply Voltage -0.3 20 V
VERR Error Signal Voltage -0.3 VCC + 0.3
VCS Current Sense Voltage VS - 0.3 VB + 0.3
VIN Logic Input Voltage -0.3 VCC + 0.3
dVs/dt Allowable Offset Supply Voltage Transient 50 V/ns
PDPackage Power Dissipation @ TA £ +25°C 1.0 W
RqJA Thermal Resistance, Junction to Ambient 100 °C/W
TJJunction Temperature -55 125
TSStorage Temperature -55 150 °C
TLLead Temperature (Soldering, 10 seconds) 300
Features
nFloating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
nGate drive supply range from 12 to 18V
nUndervoltage lockout
nCurrent detection and limiting loop to limit driven
power transistor current
nError lead indicates fault conditions and pro
grams shutdown time
nOutput in phase with input
Description
The IR2125Z is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry. Proprietary GVIC and latch immune
CMOS technologies enable ruggedized minilithic
consturction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. the ouput driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction.
IR2125Z
CURRENT LIMITING SINGLE CHANNEL DRIVER
Product Summary
VOFFSET 400V max.
IO+/- 1A / 2A
VOUT 12 - 18V
VCSth 230mV
ton/off (typ.) 150ns & 150ns
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
The protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage. Cycle
by cycle shutdown is programmed by an external
capacitor which directly controls the time interval
between detection of the over-current limiting conditions
and latched shutdown. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 400 volts.
05/02/11
www.irf.com 1
PD-60024D