TIP141 - BOURNS - Pdf.Support

May, 2012 − Rev. 6

1Publication Order Number:

TIP140/D

TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low frequency

switching applications.

Features

•High DC Current Gain −

Min hFE = 1000 @ IC

= 5.0 A, VCE = 4 V

•Collector−Emitter Sustaining Voltage − @ 30 mA

VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145

= 80 Vdc (Min) − TIP141, TIP146

= 100 Vdc (Min) − TIP142, TIP147

•Monolithic Construction with Built−In Base−Emitter Shunt Resistor

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol

TIP140

TIP145

TIP141

TIP146

TIP142

TIP147 Unit

Collector − Emitter Voltage VCEO 60 80 100 Vdc

Collector − Base Voltage VCB 60 80 100 Vdc

Emitter − Base Voltage VEB 5.0 Vdc

Collector Current

− Continuous

− Peak (Note 1)

IC10

15

Adc

Base Current − Continuous IB0.5 Adc

Total Power Dissipation

@ TC = 25_C

PD125 W

Operating and Storage

Junction Temperature Range

TJ, Tstg −65 to +150 _C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

RqJC 1.0 °C/W

Thermal Resistance,

Junction−to−Ambient

RqJA 35.7 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. 5 ms, v 10% Duty Cycle.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−100 VOLTS, 125 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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SOT−93 (TO−218)

CASE 340D

STYLE 1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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2

MARKING DIAGRAMS

AYWWG

TIP14x

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

TIP14x = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

1 BASE

2 COLLECTOR

3 EMITTER

TO−247

TO−218

DARLINGTON SCHEMATICS

BASE

EMITTER

COLLECTOR

≈8.0 k ≈40

BASE

EMITTER

COLLECTOR

≈8.0 k ≈40

NPN

TIP140

TIP141

TIP142

PNP

TIP145

TIP146

TIP147

ORDERING INFORMATION

Device Package Shipping

TIP140G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP141G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP142G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP145G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP146G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP147G SOT−93 (TO−218)

(Pb−Free)

30 Units / Rail

TIP140G TO−247

(Pb−Free)

30 Units / Rail

TIP141G TO−247

(Pb−Free)

30 Units / Rail

TIP142G TO−247

(Pb−Free)

30 Units / Rail

TIP145G TO−247

(Pb−Free)

30 Units / Rail

TIP146G TO−247

(Pb−Free)

30 Units / Rail

TIP147G TO−247

(Pb−Free)

30 Units / Rail

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0) TIP140, TIP145

TIP141, TIP146

TIP142, TIP147

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

60

80

100

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP140, TIP145

(VCE = 40 Vdc, IB = 0) TIP141, TIP146

(VCE = 50 Vdc, IB = 0) TIP142, TIP147

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2.0

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 V, IE = 0) TIP140, TIP145

(VCB = 80 V, IE = 0) TIP141, TIP146

(VCB = 100 V, IE = 0) TIP142, TIP147

ÎÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 V)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2 0

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

1000

500

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 5.0 A, IB = 10 mA)

(IC = 10 A, IB = 40 mA)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 10 A, IB = 40 mA)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 10 A, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (See Figure 1)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 V, IC = 5.0 A,

IB = 20 mA, Duty Cycle v 2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25_C)

ÎÎÎÎÎ

td

ÎÎÎÎ

−

ÎÎÎ

0.15

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎ

tr

ÎÎÎÎ

−

ÎÎÎ

0.55

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎ

ts

ÎÎÎÎ

−

ÎÎÎ

2.5

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

tf

ÎÎÎÎ

−

ÎÎÎ

2.5

ÎÎÎÎ

−

ÎÎÎ

ms

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

Figure 1. Switching Times Test Circuit

10

0.2

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

5.0

2.0

0.5

0.1

0.5 1.0 3.0 5.0 10 20

0.2

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+12 V

V1

appox.

-8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

0

RB

51 D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 8.0 k ≈ 40

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

For NPN test circuit reverse diode and voltage polarities.

1.0

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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4

VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

5000

0.5

Figure 3. DC Current Gain versus Collector Current

IC, COLLECTOR CURRENT (AMPS)

300

1.0 2.0 3.0 5.0 7.0 10

500

hFE, DC CURRENT GAIN

VCE = 4.0 V

4.0

NPN

TIP140, TIP141, TIP142

PNP

TIP145, TIP146, TIP147

Figure 4. Collector−Emitter Saturation Voltage

5.0

-75

TJ, JUNCTION TEMPERATURE (°C)

0.5

IC = 10 A, IB = 4.0 mA

2.0

3.0

4.0

-75

TJ, JUNCTION TEMPERATURE (°C)

-25 25 75 175

3.6

3.2

2.8

2.4

0.8

Figure 5. Base−Emitter Voltage

2000

1000

TJ = 150°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ, JUNCTION TEMPERATURE (°C)

125

20,000

1000

2000

3000

5000

10,000

7000

1.0

0.7

0.5

VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)

0.5 1.0 2.0 3.0 5.0 7.0 104.00.7

-50 -25 0 25 50 75 100 125 150 175

5.0

-75

2.0

3.0

1.0

0.7

-50 -25 0 25 50 75 100 125 150 175

2.0

1.6

1.2

4.0

-75 -25 25 75 175

3.6

3.2

2.8

2.4

0.8

125

2.0

1.6

1.2

100°C

TJ = 150°C

100°C

25°C

-55°C

VCE = 4.0 V

IC = 5.0 A, IB = 10 mA

IC = 1.0 A, IB = 2.0 mA

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA

IC = 1.0 A, IB = 2.0 mA

VCE = 4.0 V

IC = 10 A

5.0 A

1.0 A

VCE = 4.0 V

IC = 10 A

5.0 A

1.0 A

TYPICAL CHARACTERISTICS

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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5

ACTIVE−REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25°C

Figure 6. Active−Region Safe Operating Area

dc

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0

IC, COLLECTOR CURRENT (AMP) (mA)

10

0.2

5.0

20

1.0

20

TJ = 150°C

5030

TIP140, 145

3.0

7.0

15 70 100

TIP141, 146

TIP142, 147

IC, COLLECTOR CURRENT (AMPS)

15

10

1.0

2.0

5.0

7.0

Figure 7. Unclamped Inductive Load

L, UNCLAMPED INDUCTIVE LOAD (mH)

0.5 1.0 2.0 5.0 10 20 50 100

100 mJ

INPUT

MPS-U52

50

RBB1

1.5k

RBB2

= 100

VBB2 = 0

VBB1 = 10 V

TUT

VCE MONITOR

100 mH

VCC = 20 V

IC

MONITOR

RS = 0.1

TEST CIRCUIT

NOTE 1: Input pulse width is increased until ICM = 1.42 A.

NOTE 2: For NPN test circuit reverse polarities.

INPUT

VOLTAGE

COLLECTOR

CURRENT

1.42 A

VCE(sat)

-20 V

COLLECTOR

VOLTAGE

V(BR)CER

w ≈ 7.0 ms (SEE NOTE 1)

5.0 V

0

100 ms

0

VOLTAGE AND CURRENT WAVEFORMS

Figure 8. Inductive Load

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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6

PD, POWER DISSIPATION (WATTS)

PNP

NPN

Figure 9. Magnitude of Common Emitter

Small−Signal Short−Circuit Forward

Current Transfer Ratio

f, FREQUENCY (MHz)

2.0

1.0

10

5.0

100

1.0

3.0 5.0

7.0

2.0 7.0 10

VCE = 10 V

IC = 1.0 A

TJ = 25°C

5.0

4.0

0

1.0

2.0

3.0

Figure 10. Free−Air Temperature Power Derating

TA, FREE-AIR TEMPERATURE (°C)

0 40 80 120 160 200

hfe , SMALL-SIGNAL FORWARD CURRENT

TRANSFER RATIO

20

50

70

PNP

NPN

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A

D

V

G

K

SL

U

BQ

123

4

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

E

C

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TO−247

CASE 340L−02

ISSUE F

N

P

A

K

W

F

D

G

U

E

0.25 (0.010) MYQS

J

H

C

4

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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TIP140/D

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