© 2008 IXYS All rights reserved 1 - 4
IXYS reserves the right to change limits, test conditions and dimensions. 20080227a
IdAV = 82/123 A
VRRM = 1200-1600 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
VRSM VRRM Type
VDSM VDRM
V V
1300 1200 VHF 85-12io7 VHF 125-12io7
1500 1400 VHF 85-14io7 VHF 125-14io7
1700 1600 VHF 125-16io7
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• UL listing applied for
Applications
• DC motor control
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Half Controlled Single Phase
Rectifier Bridge, B2HKF
with Freewheeling Diode
A
B
E
C
12
Symbol Conditions Maximum Ratings
VHF 85 VHF 125
IdAV TC = 85°C; module 82 123 A
IFRMS, ITRMS per leg 58 89 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 1500 A
VR = 0 V; t = 8.3 ms (60 Hz), sine 1230 1600 A
TVJ = TVJM; t = 10 ms (50 Hz), sine 1000 1350 A
VR = 0 V; t = 8.3 ms (60 Hz), sine 1070 1450 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 6600 11200 A2s
VR = 0 V; t = 8.3 ms (60 Hz), sine 6280 10750 A2s
TVJ = TVJM; t = 10 ms (50 Hz), sine 5000 9100 A2s
VR = 0; t = 8.3 ms (60 Hz), sine 4750 8830 A2s
(di/dt)cr TVJ = TVJM; repetitive; IT = 50 A; 150 A/µs
f = 400 Hz; tP = 200 µs;
VD = 2/3 VDRM;
IG = 0.3 A; non repetitive; 500 A/µs
diG/dt = 0.3 A/µs; IT = 1/3 IdAV
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM; 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM;t
p = 30 µs < 10 W
IT = ITAVM;t
p = 500 µs < 5 W
tp = 10ms < 1 W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz RMS; t = 1 min 2500 V~
IISOL ≤ 1 mA; t = 1 s 3000 V~
MdMounting torque (M6) 5 ±15% Nm
Terminal connection torque (M6) 5 ±15% Nm
Weight typ. 300 g
Dimensions in mm (1 mm = 0.0394")
M
6
x
1
2
7
330
27
6.5
6.5
C~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
556
7
2.8 x 0.8
M6
VHF 85
VHF 125
C ~
2
E ~
1A +
B -
p h a s e - o u t
© 2008 IXYS All rights reserved 2 - 4
IXYS reserves the right to change limits, test conditions and dimensions. 20080227a
Symbol Conditions Characteristic Values
VHF 85 VHF 125
IR, IDVR = VRRM; VD = VDRM; TVJ = TVJM < 5 mA
TVJ = 25°C < 0.3 mA
VF, VTIF; IT = 200 A; TVJ = 25°C < 1.75 < 1.57 V
VT0 For power-loss calculations only 0.85 0.85 V
rT(TVJ = 125°C) 6 3.5 mΩ
VGT VD = 6 V; TVJ = 25°C < 1.5 V
TVJ = -40°C < 1.6 V
IGT VD = 6 V; TVJ = 25°C < 100 mA
TVJ = -40°C < 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM < 0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM < 5 mA
ILIG = 0.3 A; tG = 30 µs; < 450 mA
TVJ = 25°C; diG/dt = 0.3 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞< 200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM;< 2 µs
IG = 0.3 A; diG/dt = 0.3 A/µs
RthJC per thyristor (diode); DC current 0.65 0.46 K/W
per module 0.108 0.077 K/W
RthJK per thyristor (diode); DC current 0.8 0.55 K/W
per module 0.133 0.092 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Fig. 1 Gate trigger delay time
Fig. 2 Surge overload current
per diode or thyristor
IFSM, ITSM: Crest value t: duration
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
TSM
TVJ=45°C TVJ=150°C
1150 1000
I
------
I
TSM
T(OV)
0 V
RRM
1/ 2 V
RRM
1 V
RRM
10 100 1000
1
10
100
1000
mA
I
G
μs
t
gd
Limit
typ.
T
VJ
= 25°C
VHF 85
VHF 125
p h a s e - o u t
© 2008 IXYS All rights reserved 3 - 4
IXYS reserves the right to change limits, test conditions and dimensions. 20080227a
VHF 85
Fig.3 Gate trigger characteristic
Fig. 6 Transient thermal impedance per thyristor or diode (calculated)
Fig. 5 Maximum forward current
at case temperature
Fig. 7 Power dissipation vs. direct output current and ambient temperature
Fig. 4 Forward current vs. voltage trop
per diode or thyristor
0.5 1 1.5 2
0
50
100
150
200
250
300
V [V]
F
IF
[A] 1:T = 125°
VJ
2:T = 25°
VJ
C
C
12
0.01 0.1 110
0.2
0.4
0.6
0.8
1
K/W
Zth
t[s]
ZthJK
ZthJC
50 100 150 20
0
0
20
40
60
80
100 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
TAV
[A]
80
60
40
20
0
50
100
150
200
250
300
80
85
90
95
100
105
110
115
120
125
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.5
0.67
0.39
0.25
0.17 0.09 = RTHCA [K/W]
ITAVM
[A]
Tamb
[K]
0
50
100
150
[W]
PVTOT
PSCH 85
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
56
p h a s e - o u t
© 2008 IXYS All rights reserved 4 - 4
IXYS reserves the right to change limits, test conditions and dimensions. 20080227a
VHF 125
316
Fig. 3 Gate trigger characteristic
Fig. 6 Transient thermal impedance per thyristor or diode (calculated)
Fig. 5 Maximum forward current
at case temperature
Fig. 7 Power dissipation vs. direct output current and ambient temperature
Fig. 4 Forward current vs. voltage trop
per diode or thyristor
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
56
0.5 1 1.5 2
0
50
100
150
200
250
300
V [V]
F
IF
[A] 1:T = 125°C
VJ
2:T = 25°C
VJ
12
50 100 150 20
0
0
20
40
60
80
100
120
4
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
TAV
[A]
0.01 0.1 110
0.2
0.4
0.6
0.8
K/W
Zth
t[s]
ZthJK
ZthJC
125
75
25
0
50
100
150
200
250
300
350
400
80
85
90
95
100
105
110
115
120
125
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.13
0.51
0.3
0.2
0.13 0.07 = RTHCA [K/W]
ITAVM
[A]
Tamb
[K]
0
50
100
150
[W]
PVTOT
PSCH 125
p h a s e - o u t