VHF 85 VHF 125 IdAV = 82/123 A VRRM = 1200-1600 V Half Controlled Single Phase Rectifier Bridge, B2HKF with Freewheeling Diode E~ V V 1300 1500 1700 1200 1400 1600 Symbol Type 2 E C VHF 85-12io7 VHF 85-14io7 VHF 125-12io7 VHF 125-14io7 VHF 125-16io7 1 B Conditions 123 89 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 1500 1600 A A TVJ = TVJM; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 1350 1450 A A TVJ = 45C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 11200 10750 A2 s A2 s TVJ = TVJM; VR = 0; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 9100 8830 A2s A2 s u TVJ = 45C; VR = 0 V; TVJ = TVJM; repetitive; IT = 50 A; f = 400 Hz; tP = 200 s; VD = 2/3 VDRM; 150 A/s IG = 0.3 A; non repetitive; diG/dt = 0.3 A/s; IT = 1/3 IdAV 500 A/s * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * UL listing applied for Applications * DC motor control Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") M6x12 1000 V/s 10 V < 10 < 5 < 1 0.5 W W W W -40...+125 125 -40...+125 C C C 2500 3000 V~ V~ 5 15% 5 15% Nm Nm 300 g 3 VRGM A+ 30 TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) p (dv/dt)cr h a (di/dt)cr 82 58 -o IFSM, ITSM VHF 125 e TC = 85C; module per leg s IdAV IFRMS, ITRMS B2 Features Maximum Ratings VHF 85 I2t C~ 1 7 VRRM VDRM t VRSM VDSM A TVJ TVJM Tstg VISOL 50/60 Hz RMS; t = 1 min IISOL 1 mA; t=1s Md Mounting torque (M6) Terminal connection torque (M6) Weight typ. 26 26 C ~ E ~ B - A + 3 4 2 5 1 6 12 2.8 x 0.8 6.5 PGAVM 94 80 72 6 5 5 tp = 30 s tp = 500 s tp = 10ms 15 TVJ = TVJM; IT = ITAVM; 54 27 6.5 PGM 7 25 66 M6 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080227a 1-4 VHF 85 VHF 125 Symbol Conditions Characteristic Values VHF 85 IR, ID 1000 TVJ = 25C VHF 125 VR = VRRM; VD = VDRM; TVJ = TVJM TVJ = 25C < 5 < 0.3 mA mA s tgd typ. VF, VT IF; IT = 200 A; TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; TVJ = TVJM; < 1.57 V 0.85 6 0.85 3.5 V m TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C < < < < 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM VD = 2/3 VDRM < 0.2 < 5 V mA IG = 0.3 A; tG = 30 s; TVJ = 25C; diG/dt = 0.3 A/s < 450 IH TVJ = 25C; VD = 6 V; RGK = < 200 tgd TVJ = 25C; VD = 1/2 VDRM; IG = 0.3 A; diG/dt = 0.3 A/s RthJK dS dA a 10 1 10 mA 100 1000 IG mA t mA per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration s u <2 0.65 0.108 0.8 0.133 0.46 0.077 0.55 0.092 K/W K/W K/W K/W -o RthJC Limit 100 Fig. 1 Gate trigger delay time 10 9.4 50 e IL < 1.75 mm mm m/s2 I T(OV) -----ITSM ITSM (A) TVJ=45C TVJ=150C 1150 1.6 1000 1.4 1.2 1 0 V RRM a s 0.8 1/2 V RRM 0.6 0.4 p h 10 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 1 V RRM 0 10 1 t[ms] 10 2 10 3 Fig. 2 Surge overload current per diode or thyristor IFSM, ITSM: Crest value t: duration 20080227a 2-4 VHF 85 300 10 3: IGT, TVJ = -40C VG DC [A] 250 2:TVJ= 25C 2: IGT, TVJ = 25C V 100 1:T VJ= 125C 1: IGT, TVJ = 125C [A] sin.180 rec.120 80 rec.60 rec.30 200 60 3 2 1 5 6 150 1 40 4 100 20 50 IF 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125C 0.1 100 5W 6: PGM = 10 W ITAV 1 2 0 0 101 102 103 mA 104 0.5 IG 1 VF [V] 1.5 50 2 Fig. 4 Forward current vs. voltage trop per diode or thyristor 150 200 Fig. 5 Maximum forward current at case temperature t Fig.3 Gate trigger characteristic 100 T (C) C 1 K/W u Z thJK 0.8 -o Z thJC 0.6 e 0.4 s 0.2 Z th 0.1 1 t[s] 10 a 0.01 h Fig. 6 Transient thermal impedance per thyristor or diode (calculated) p 300 [W] PSCH 85 250 TC 80 0.17 0.09 = RTHCA [K/W] 85 0.25 90 200 95 0.39 100 150 105 0.67 100 DC sin.180 rec.120 rec.60 rec.30 50 PVTOT 0 110 115 1.5 120 C 125 20 ITAVM 40 60 80 0 [A] 50 100 Tamb 150 [K] Fig. 7 Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080227a 3-4 VHF 125 1: IGT, TVJ = 125C V VG 140 300 10 2: IGT, TVJ = 25C [A] 3: IGT, TVJ = -40C 250 DC 1:T = 125C VJ [A] 120 2:TVJ= 25C sin.180 rec.120 rec.60 100 rec.30 200 80 3 2 1 5 6 150 60 1 4 100 IGD, TVJ = 125C 0.1 100 4: PGAV = 0.5 W 50 5: PGM = I F 5W 6: PGM = 10 W 40 20 ITAV 1 2 0 0 101 102 mA 103 104 0.5 IG 1.5 50 2 100 150 200 T (C) C Fig. 4 Forward current vs. voltage trop per diode or thyristor Fig. 5 Maximum forward current at case temperature t Fig. 3 Gate trigger characteristic 1 VF[V] 0.8 u K/W Z thJC e 0.4 -o Z thJK 0.6 s 0.2 Z th 0.1 1 t[s] 10 a 0.01 300 p 400 [W] PSCH 125 350 h Fig. 6 Transient thermal impedance per thyristor or diode (calculated) 80 0.13 0.07 = RTHCA [K/W] TC 85 0.2 90 95 250 0.3 100 200 105 0.51 150 DC sin.180 rec.120 rec.60 rec.30 100 50 PVTOT 0 110 115 1.13 120 C 125 25 ITAVM 75 125 0 [A] 50 100 Tamb 150 [K] IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 316 Fig. 7 Power dissipation vs. direct output current and ambient temperature 20080227a 4-4