IXTA10P15T - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C -150 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ-150 V

VGSS Continuous + 15 V

VGSM Transient + 25

ID25 TC= 25°C -10 A

IDM TC= 25°C, Pulse Width Limited by TJM - 30 A

IATC= 25°C -10 A

EAS TC= 25°C 200 mJ

PDTC= 25°C83W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-252 0.35 g

TO-263 2.50 g

TO-220 3.00 g

DS100290(10/10)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA -150 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.5 V

IGSS VGS = ± 15V, VDS = 0V ±50 nA

IDSS VDS = VDSS, VGS = 0V - 3 μA

TJ = 125°C -100 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 350 mΩ

TrenchPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTY10P15T

IXTA10P15T

IXTP10P15T

VDSS = -150V

ID25 = -10A

RDS(on) ≤≤

≤≤

≤ 350mΩΩ

ΩΩ

Ω

Features

zInternational Standard Packages

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Diode

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-252 (IXTY)

G

S

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

GDS

TO-220AB (IXTP)

D (Tab)

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY10P15T IXTA10P15T

IXTP10P15T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 5 9 S

Ciss 2210 pF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 146 pF

Crss 43 pF

td(on) 19 ns

tr 16 ns

td(off) 40 ns

tf 12 ns

Qg(on) 36 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC

Qgd 8 nC

RthJC 1.5 °C/W

RthCS TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V -10 A

ISM Repetitive, Pulse Width Limited by TJM - 40 A

VSD IF = IS, VGS = 0V, Note 1 -1.3 V

trr 120 ns

QRM 530 nC

IRM - 9 A

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 5Ω (External)

IF = 0.5 • ID25, -di/dt = -100A/μs

VR = - 100V, VGS = 0V

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

Bottom Side

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-252 Outline

Pins: 1 - Gate 2,4 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 2.19 2.38 0.086 0.094

A1 0.89 1.14 0.035 0.045

A2 0 0.13 0 0.005

b 0.64 0.89 0.025 0.035

b1 0.76 1.14 0.030 0.045

b2 5.21 5.46 0.205 0.215

c 0.46 0.58 0.018 0.023

c1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.32 5.21 0.170 0.205

E 6.35 6.73 0.250 0.265

E1 4.32 5.21 0.170 0.205

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.40 10.42 0.370 0.410

L 0.51 1.02 0.020 0.040

L1 0.64 1.02 0.025 0.040

L2 0.89 1.27 0.035 0.050

L3 2.54 2.92 0.100 0.115

IXTY10P15T IXTA10P15T

IXTP10P15T

Fi g . 1. Ou tp ut Char acter i st i cs @ T

J

= 25ºC

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

-3-2.5-2-1.5-1-0.50

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 5

V

- 6

V

- 7

V

Fi g . 2. Exten d ed Ou tp u t Ch ar acter i s ti cs @ T

J

= 25ºC

-40

-35

-30

-25

-20

-15

-10

-5

0

-30-25-20-15-10-50

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 5

V

- 6

V

- 7

V

- 8

V

Fi g . 3. Ou tp ut Char acter i st i cs @ T

J

= 125º C

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

-5.5-5-4.5-4-3.5-3-2.5-2-1.5-1-0.50

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 7V

- 6V

- 5V

- 4V

Fig. 4. R

DS(on)

Normalized to I

D

= - 5A vs.

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50-250 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= -10A

I

D

= - 5A

Fig. 5. R

DS(on)

Normalized to I

D

= - 5A vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-35-30-25-20-15-10-50

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 6. Maximum D r ai n C u rr en t vs.

Case Temp er atu r e

-12

-10

-8

-6

-4

-2

0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY10P15T IXTA10P15T

IXTP10P15T

Fig. 7. Input Admittance

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

2

4

6

8

10

12

14

16

18

20

-22-20-18-16-14-12-10-8-6-4-20

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-30

-25

-20

-15

-10

-5

0

-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 4 8 12162024283236

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 75V

I

D

= - 5A

I

G

= -1mA

Fig. 11. Capacitance

10

100

1,000

10,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

Fi g. 12. F o r ward-B ias Safe Operating Area

0.1

1

10

100

1 10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

---

-

100ms

-

IXTY10P15T IXTA10P15T

IXTP10P15T

Fig . 14. R esisti ve Tu rn -o n R ise Time vs .

Drain Current

13

14

15

16

17

18

-10-9.5-9-8.5-8-7.5-7-6.5-6-5.5-5

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 5Ω, V

GS

= -10V

V

DS

= - 75V

T

J

= 25ºC

T

J

= 125ºC

Fig . 15. R e sisti ve Turn -on S witch in g Time s vs.

Gate Resistance

0

5

10

15

20

25

30

35

40

45

5 10152025

R

G

- Ohms

t

r

- Nanoseconds

0

5

10

15

20

25

30

35

40

45

t d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 75V

I

D

= -10A, - 5A

Fi g. 16. R esisti ve Tu r n -o ff Swi tch i ng Times vs .

Junction Temperature

10.5

11.0

11.5

12.0

12.5

13.0

13.5

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

32

34

36

38

40

42

44

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= -10V

V

DS

= - 75V

I

D

= - 5A

I

D

= - 10A

Fig . 17. R esisti ve Tu rn -o ff Swi tch i ng Times vs .

Drain Current

33

34

35

36

37

38

39

40

41

-10-9.5-9-8.5-8-7.5-7-6.5-6-5.5-5

I

D

- Amperes

t

f

- Nanoseconds

10.4

10.8

11.2

11.6

12.0

12.4

12.8

13.2

13.6

t d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= -10V

V

DS

= - 75V

T

J

= 125ºC

T

J

= 25ºC

Fig . 13. R esisti ve Tu rn -o n R ise Time vs .

Junction Temperature

13

14

15

16

17

18

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 5Ω, V

GS

= -10V

V

DS

= - 75V

I

D

= - 5A

I

D

= -10A

Fig . 18. R esisti ve Tu rn -o ff Swi tch i ng Times vs .

Gate Resistance

0

10

20

30

40

50

5 10152025

R

G

- Ohms

t

f

- Nanoseconds

20

30

40

50

60

70

t d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 75V

I

D

= - 5A, -10A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY10P15T IXTA10P15T

IXTP10P15T

IXYS REF: T_10P15T(A1)10-18-10

Fi g . 19. Maxi mum Tran si en t Th er mal I mped an ce

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W