053-7107 Rev - 11-2002
MS1649
RF & MICROWAVE TRANSISTORS
UHF CLASS C MOBILE APPLICATIONS
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1649 is a 12.5V epitaxial NPN planar transistor
designed primarily for UHF communications. This device is
packaged in a grounded emitter TO-39 package for increased
power gain and optimum heat dissipation.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current 1.0 A
PTOT Total Power Dissipation 7.8 W
TSTG Storage Temperature -65 to +200 °
°°
°C
TJ Junction Temperature +200 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-Case 35.0 °
°°
°C/W
1. Emitter
2. Base
3. Collector
TO-39
Features
FeaturesFeatures
Features
• 470 MHz
• POUT = 3W
• GP = 9.5dB MINIMUM
• COMMON EMITTER CONFIGURATION
053-7107 Rev - 11-2002
MS1649
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATIC STATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCES I
C = 50mA VBE = 0 36 --- --- V
BVCEO I
C = 50mA IB = 0 16 --- --- V
BVEBO I
E = 1mA IC = 0 3.5 --- --- V
ICES V
CB = 12.5V VBE = 0 --- --- 1.0 mA
HFE V
CE = 5.0V IC =100mA 20 --- 150 ---
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
GPE f = 470MHz POUT = 3.0W VCC = 12.5V 9.5 --- --- dB
η
ηη
η f = 470MHz POUT = 3.0W VCC = 12.5V 50 --- --- %
COB f = 1.0MHz VCB = 12.5 V --- --- 12 pf
IMPEDANCE DATA
IMPEDANCE DATAIMPEDANCE DATA
IMPEDANCE DATA
FREQ ZIN(Ω)
Ω)Ω)
Ω) ZCL(Ω)
Ω)Ω)
Ω)
173 MHz 3.5 + j1.2 14.0 + j10.0
458 MHz 3.3 + j3.2 11.0 + j5.7
053-7107 Rev - 11-2002
MS1649
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
