ML1412R
ROITHNER LASERTECHNIKROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: rlt@mcb.at http://www.roithner.mcb.at
RLT6830G TECHNICAL DATA
High Power Visible Wavelength Laserdiode
Structure: AlGaInP, index guided, single transverse mode
Lasing wavelength: 685 nm typ.
Max. optical power: 30 mW cw
Package: 9 mm G or 5.6 mm MG
PIN CONNECTION:
1) Laser diode anode
2) Laser diode cathode and photodiode anode
3) Photodiode cathode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Optical Output Power cw Po35 mW
LD Reverse Voltage VR(LD) 2V
PD Reverse Voltage VR(PD) 30 V
Operation Case Temperature TC-10 .. +60 °C
Storage Temperature TSTG -10 .. +100 °C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Optical Output Power Pokink free 30 50 *) mW
Threshold Current Ith cw 35 60 mA
Operation Current Iop Po =30mW 80 120 mA
Operating Voltage Vop Po =30mW 2.0 2.4 3.0 V
Lasing Wavelength λ pPo =30mW 670 685 700 nm
Beam Divergence θ// Po =30mW 79.5 12 °
Beam Divergence θ⊥Po =30mW 16 20 25 °
Slope efficiency ηPo =30mW 0.75 mW/mA
Monitor Current ImPo =30mW, Vr=5V 0.05 0.2 1.5 mA
*) Note: Duty cycle less than 50%, pulse width less than 1µs
