ZXT10P20DE6Q 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BVCEO > -20V IC = -2.5A Continuous Collector Current ICM = -6A Peak Pulse Current RCE(SAT) = 96m for a Low Equivalent On-Resistance Low Saturation Voltage (-220mV Max @ -1A) hFE Characterized up to -6A for High Current Gain Hold-Up Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT26 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight: 0.015 grams (Approximate) Applications DC-DC Converters Power Management Functions Power Switches Motor Control C SOT26 B C C C C B E E Top View Pin-Out Top View Device Symbol Ordering Information (Note 5) Part Number ZXT10P20DE6QTA Notes: Compliance Automotive Marking 718 Reel Size (inches) 7 Tape Width (mm) 8 Quantity Per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 718 Date Code Key Year 2018 Code F Month Code 2019 G Jan 1 2020 H Feb 2 ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 Mar 3 2021 I Apr 4 YM SOT26 2022 J May 5 718 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) 2023 K Jun 6 1 of 7 www.diodes.com 2024 L Jul 7 2025 M Aug 8 2026 N Sep 9 Oct O 2027 O Nov N 2028 P Dec D June 2018 (c) Diodes Incorporated ZXT10P20DE6Q Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -7 V Base Current IB -500 mA Continuous Collector Current IC -2.5 A Peak Pulse Collector Current ICM -6 A Symbol Value Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor 1.1 8.8 1.7 13.6 113 73 (Note 6) PD (Note 7) W mW/C Thermal Resistance, Junction to Ambient (Note 6) (Note 7) RJA Thermal Resistance, Junction to Leads (Note 8) RJL 30.01 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range C/W ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is measured at t 5secs. 8. Thermal resistance from junction to solder-point (at the end of the collector leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 2 of 7 www.diodes.com June 2018 (c) Diodes Incorporated ZXT10P20DE6Q Thermal Characteristics and Derating Information 1 DC 1s 100ms 10ms 1ms 100m o 100s o Single Pulse T A=25 C 100m Thermal Resistance ( C/W) Max Power Dissipation (W) IC Collector Current (A) 10 1 10 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 VCE Collector-Emitter Voltage (V) Temperature ( C) Safe Operating Area Derating Curve o 120 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 0 1m 100 D=0.05 D=0.1 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 3 of 7 www.diodes.com June 2018 (c) Diodes Incorporated ZXT10P20DE6Q Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -20 -65 V IC = -100A Collector-Emitter Breakdown Voltage (Note 10) BVCEO -20 -53 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.8 V IE = -100A Collector-Base Cutoff Current ICBO <1 -100 nA VCB = -15V Emitter Cutoff Current IEBO <1 -100 nA VEB = -5V Collector-Emitter Cutoff Current ICES <1 -100 nA VCES = -15V 300 475 IC = -10mA, VCE = -2V 300 450 IC = -0.1A, VCE = -2V 150 230 IC = -2A, VCE = -2V 15 30 IC = -6A, VCE = -2V -19 -30 -170 -220 -190 -250 -240 -350 ON CHARACTERISTICS (Note 10) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(SAT) IC = -0.1A, IB = -10mA mV IC = -1A, IB = -20mA IC = -1.5A, IB = -50mA IC = -2.5A, IB = -150mA Base-Emitter Saturation Voltage VBE(SAT) -0.97 -1.05 V IC = -2.5A, IB = -150mA Base-Emitter Turn-On Voltage VBE(ON) -0.85 -0.95 V IC = -2.5A, VCE = -2V SMALL SIGNAL CHARACTERISTICS fT 150 180 MHz COBO 21 30 pF VCB = -10V, f = 1MHz Turn-On Time t(ON) 40 ns Turn-Off Time t(OFF) 670 ns VCC = -10V, IC = -1A IB1 = -IB2 = -20mA Current Gain-Bandwidth Product Output Capacitance Note: VCE = -10V, IC = -50mA, f = 100MHz 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 4 of 7 www.diodes.com June 2018 (c) Diodes Incorporated ZXT10P20DE6Q Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.25 o IC/IB=50 VCE(SAT) (V) 0.20 100m IC/IB=100 IC/IB=50 10m 10m 100m 1 0.15 o 25 C 0.10 o -55 C 10m 100m 1 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC VCE=2V o 100 C 630 540 1.0 450 o 25 C 0.8 360 0.6 270 0.4 180 o -55 C 0.2 90 0.0 1m 0.00 1m IC Collector Current (A) 1.4 1.2 10 10m 100m 1.0 Typical Gain (hFE) 1m 0 10 1 10 IC/IB=50 0.8 o -55 C 0.6 o 25 C o 100 C 0.4 1m IC Collector Current (A) 10m 100m 1 10 IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.0 100 C 0.05 IC/IB=10 Normalised Gain o VBE(SAT) (V) VCE(SAT) (V) T A=25 C VCE=2V VBE(ON) (V) 0.8 o -55 C 0.6 o 25 C 0.4 0.2 1m o 100 C 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 5 of 7 www.diodes.com June 2018 (c) Diodes Incorporated ZXT10P20DE6Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 D E1 SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e 0.95 e1 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a 8 a1 7 All Dimensions in mm E b a1 e1 A2 A3 A1 Seating Plane e L c a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 C1 Y1 G Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 C Y X ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 6 of 7 www.diodes.com June 2018 (c) Diodes Incorporated ZXT10P20DE6Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 7 of 7 www.diodes.com June 2018 (c) Diodes Incorporated