DIM1200NSM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
www.dynexsemi.com
Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004
FEATURES
■Trench Gate Field Stop Technology
■Low Conduction Losses
■Low Switching Losses
■10µs Short Circuit Withstand
■Isolated MMC Base with AlN Substrates
■High Thermal Cycling Capability
APPLICATIONS
■High Reliability Inverters
●Wind Turbines
●Motor Controllers
●UPS Systems
■Traction
●Propulsion Drives
●Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200NSM17-E000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200NSM17-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
VCES 1700V
VCE(sat) * (typ) 2.0V
IC(max) 1200A
IC(PK) (max) 2400A
*Measured at auxiliary terminals.
DIM1200NSM17-E000
Single Switch IGBT Module
Fig. 1 Single switch circuit diagram
Fig. 2 Module outline
Outline type code: N
(See package details for further information)
C2C1
Aux C
G
Aux E E1 E2
External connection
External connection
C1
E1
C2
E2
G
E
2
C
1
E2
- Aux Emitter
C1
- Aux Collector
DIM1200NSM17-E000
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
VGE = 0V
-
Tcase = 75˚C
1ms, Tcase = 110˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Units
V
V
A
A
kW
kA2s
V
PC
Max.
1700
±20
1200
2400
6.94
200
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage - per module
Partial discharge - per module
DIM1200NSM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Max.
18
40
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
-
DIM1200NSM17-E000
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 48mA, VGE = VCE
VGE = 15V, IC = 1200A
VGE = 15V, IC = 1200A, , Tcase = 125˚C
DC
tp = 1ms
IF = 1200A
IF = 1200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 1000V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Internal transistor resistance
Short circuit. ISC
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
†
IF
IFM
VF
†
Cies
LM
RINT
SCData
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
Max.
5
25
4
6.4
2.4
3.0
1200
2400
2.3
2.4
-
-
-
-
-
Typ.
-
-
-
5.8
2.0
2.3
-
-
1.9
2.0
105
20
0.27
4500
4300
Min.
-
-
-
5.2
-
-
-
-
-
-
-
-
-
-
-
Note:
† Measured at auxiliary terminals.
* L is the circuit inductance + LM
DIM1200NSM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1200
200
320
900
220
300
14
275
950
180
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 900V
RG(ON) = 1.2Ω
RG(OFF) = 1.5Ω
L ~ 100nH
IF = 1200A, VR = 900V,
dIF/dt = 5200A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1300
300
420
900
250
400
475
1150
320
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 900V
RG(ON) = 1.2Ω
RG(OFF) = 1.5Ω
L ~ 100nH
IF = 1200A, VR = 900V,
dIF/dt = 5200A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
DIM1200NSM17-E000
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
50
100
150
200
250
300
350
400
450
500
0 200 400 600 800 1000 1200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
Conditions:
T
case
= 125ºC
V
cc
= 900V
R
g(on)
= 1.2 ohms
R
g(off)
= 1.5 ohms
0
500
1000
1500
2000
0610
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
24 8
Conditions:
T
case
= 125ºC
I
C
= 1200A
V
cc
= 900V
E
on
E
off
E
rec
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Collector current, IC - (A)
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
Common emitter
Tcase = 125˚C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
Collector current, I
C
- (A)
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
Common emitter
Tcase = 25˚C
DIM1200NSM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics Fig. 8 IGBT reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2600
2400
2800
0 400 800 1200 1600 2000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125˚C
V
ge
= ±15V
R
g(min)
= 1.5 Ohms
Module
Chip
Fig. 10 Transient thermal impedance
1
0.1
10
100
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
IGBT R
i
(˚C/KW)
t
i
(ms)
Diode R
i
(˚C/KW)
t
i
(ms)
1
0.56
0.12
1.23
0.11
2
4.00
3.89
9.26
4.24
3
5.64
47.15
12.96
48.75
4
7.81
257.21
16.53
256.75
Diode
Transistor
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage, VF - (V)
Forward current, IF - (A)
T
j = 25˚C
T
j = 125˚C
0
200
400
600
800
1000
1200
1400
1600
0 200 400 600 800 1000 1200 1400 1600 1800
Reverse voltage, Vr - (V)
Reverse recovery current, Irr - (A)
Tj = 125˚C
DIM1200NSM17-E000
8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
140
31.5
4x M8
28
5
38
6x M4
45.2
40 20
43.5 18
57 57
65 65
6x Ø7
62
20
62
20
48.8
10.35
10.65
C1
E1
C2
E2
G
E
2
C
1
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1050g
Module outline type code: N
E
2
- Aux Emitter
C
1
- Aux Collector
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
C2C1
Aux C
G
Aux E E1 E2
External connection
External connection
Fig. 11 Package details
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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