DSS6-0045AS
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode
4
1
3
Part number
DSS6-0045AS
Marking on Product: 6Y045AS
Backside: cathode
FAV
F
VV0.5
RRM
6
45
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0045AS
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.63
R3K/
W
R
min.
6
V
RSM
V
250T = 25°C
VJ
T = °C
VJ
m
A
2.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
165
P
tot
50
W
T = 25°C
C
RK/
W
6
45
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
0.71
T = 25°C
VJ
125
V
F0
V
0.35T = °C
VJ
175
r
F
13.9 m
Ω
V
0.50T = °C
VJ
I = A
F
V
6
0.59
I = A
F
12
I = A
F
12
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
45
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
497
j
unction capacitance V = V5 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
120
A
45
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0045AS
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Z Y Y WW
Logo
Part number
A
ssembly Line
abcdefg
P
r
odu
c
tM
a
r
ki
n
g
IXYS
Date Code
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g0.3
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 20 A
per terminal
150-55
TO-252
(
DPak
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSS6-0045AS 497878Tape & Reel 25006Y045ASStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.35
mΩ
V
0 max
R
0 max
slope resistance * 10.7
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0045AS
4
1
3
Outlines TO-252 (DPak)
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSS6-0045AS
0.0 0.2 0.4 0.6 0.8 1.0
1
10
0 1020304050
0.0001
0.001
0.01
0.1
1
10
100
51501020
0
2
4
6
8
10
12
14
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
0 50 100 150 200
0
5
10
15
20
25
0 1020304050
100
1000
0.08
DC
T
VJ
=
175°C
150°C
125°C
25°C
25°C
50°C
75°C
100°C
125°C
T
VJ
=175°C
150°C
T
VJ
=25°C
d = 0.5
Single Pulse
0.17
0.25
0.33
D=0.5
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
V]V[
R
[V]
C
T
[pF]
I
F(AV)
[A]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[s]
Note: All curves are per diode
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
20
d =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
