Linear Integrated System
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Doc 201112 05/30/2013 Rev#A7 ECN# J SST 201
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE VGS(off) ≤ 1.5V
HIGH GAIN AV = 80 V/V
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatur es
Storage Temperature -55 to +150 °C
Operating Junction Temperature -55 to +150 °C
Maximum Power Dissipation
Continuous Power Dissipation TA=25°C 350mW
Maximum Current
Forward Gate Current 50mA
Maximum Voltages
Gate to Drain Voltage -40V
Gate to Source Voltage -40V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
J/SST201, 202 -40
BVGSS Gate to Source
Breakdown Voltage J/SST204 -25 IG = -1µA, VDS = 0V
J/SST201 -0.3 -1.5
J/SST202 -0.8 -4
VGS(off) Gate to Source Cutoff
Voltage
J/SST204 -0.2 2
V
VDS = 15V, ID = 10nA
J/SST201 0.2 1
J/SST202 0.9 4.5
IDSS Drain to Source
Saturation Current2
J/SST204 0.2 3
mA VDS = 15V, VGS = 0V
IGSS Gate Reverse Current -100 VGS = -20V, VDS = 0V
IG Gate Operating Current -2
VDG = 10V, ID = 0.1mA
ID(off) Drain Cutoff Current 2
pA
VDS = 15V, VGS = -5V
J/SST201, 204 0.5
gfs Forward
Transconductance J/SST202 1 mS VDS = 15V, VGS = 0V, f = 1kHz
Ciss Input Capacitance 4.5
Crss Reverse Transfer Capacitance 1.3 pF VDS = 15V, VGS = 0V, f = 1MHz
en Noise Voltage 6 nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
J SERIES
HIGH GAIN
N-CHANNEL JFET
J/SST201 SERIES