DE275-102N06A
RF Power MOSFET
V
DSS = 1000 V
ID25 = 8 A
RDS(on) = 1.5 Ω
ΩΩ
Ω
PDC = 590 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 1000 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 8 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
48 A
I
AR
T
c
= 25°C 6 A
E
AR
T
c
= 25°C 20 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5 V/ns
I
S
= 0 >200 V/ns
P
DC
590 W
P
DHS
T
c
= 25°C
Derate 2.0W/°C above 25°C 300 W
P
DAMB
T
c
= 25°C 3.0 W
R
thJC
0.25 C/W
R
thJHS
0.50 C/W
Symbol Test Conditions Characteristic Values
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 3.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1 µA
mA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 1.5 Ω
g
fs
V
DS
= 20 V, I
D
= 0.5I
D25
, pulse test 2.5 4.3 7 S
R
thJHS
0.50 C/W
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm (0.063 in) from case for 10 s 300 °C
Weight 2 g
T
J
= 25°C unless otherwise specified
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
DE275-102N06A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
min. typ. max.
R
G
0.3 Ω
C
iss
1650 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 80 pF
C
rss
18 pF
C
stray
Back Metal to any Pin 21 pF
T
d(on)
3 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
2 ns
T
d(off)
4 ns
T
off
5 ns
Q
g(on)
46 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
I
G
= 3mA 8 nC
Q
gd
25 nC
(T
J
= 25°C unless otherwise specified)
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 6 A
I
SM
Repetitive; pulse width limited by T
JM
48 A
V
SD
1.5 V
T
rr
200 ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
Q
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
0.6 µC
I
RM
4 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
DE275-102N06A
RF Power MOSFET
V
D S
vs.
Capacitance
1
10
100
1000
10000
0 200 400 600 800
V
DS
Voltage (V)
Capacitance (pF)
Gate-to-Source Voltage vs . Gate Charge
V
DS
= 500 V I
D
= 4 A
0
2
4
6
8
10
12
14
16
0 20 40 60 80
Gate Charge (nC)
Gate-to-Source Voltage (V)
Typical Transfe r Characteristics
V
DS
= 60V PW = 4uS
0
5
10
15
20
25
5 6 7 8 9 10
V
GS
, Gate-to Source Voltage (V)
I
D
, Drain Current (A)
Typical Output Characteristics
0
2
4
6
8
10
12
14
16
18
20
22
24
0 10 20 30 40 50 60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Fig. 1 Fig. 2
Fig. 3 Fig. 4
C
iss
C
oss
C
rss
Top 8-10V
7.5V
7V
6.5V
6V
5.5V
Bottom 5V
DE275-102N06A
RF Power MOSFET
Source
Gate Drain
Fig. 5 Package Drawing
Source
Source
Source
DE275-102N06A
RF Power MOSFET
Fig. 6 Class C Test Circuit
13.56MHz Class C RF Test Circuit
1. T1- 2:1 Turns ratio, Ferronics binocular core P/N 12-365-J
Primary - 2 turns of 26 AWG, single strand Teflon Wire.
Secondary - 1 turn of braid with the primary wire run inside of it.
2. L1 - < 90nH, 5 turns, 0.25" id, 18 AWG single strand mag-
net wire, 0.55" long.
3. C1 - 3000pf, 3 x 1000pf, ATC capacitors, P/N 102KW.
4. C2 - 470pf, ATC capacitor, P/N 471JW.
5. R1 - 3.3 ohm, 3 x 10 ohm Caddock resistors, P/N
MP850-10-10.
6. Q1 - DE275-102N06A
7. C3 - 5nf, 5 x .001uf, ceramic disc capacitors
8. C4 - 60pf - 100pf air variable capacitor
9. L2 - 800nH, 6 turns, 1" id, 12 AWG single strand magnet
wire, 0.85" long.
10. C5 - 250pf - 480pf mica compression capacitor, Sprague
Goodman GME90901.
11. L3 - 5.4uH, 20 turns, 18 AWG single strand magnet wire, Mi-
crometals core T-106-2, powered iron core.
12. C6A - 0.02uf, 2 x 0.01uf ceramic disc capacitors.
13. C6B - 0.08uf, 8 x 0.01uf ceramic disc capacitors.
14. FB1 - 3 x 900mu ferrite beads on 18 AWG buss wire.
250V
DE275-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds
is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-102n06a.html
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
* TERMINALS: D G S
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
5 6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
13
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
Doc #9200-0221 Rev 5
© 2009 IXYS RF
