SMBT2907A/MMBT2907A
1 Jun-12-2002
PNP Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A/ MMBT2222A (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBT2907A/MMBT2907A s2F 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 60 V
Collector-base voltage VCBO 60
Emitter-base voltage VEBO 5
DC collector current IC600 mA
Total power dissipation, TS = 77 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
220 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBT2907A/MMBT2907A
2 Jun-12-2002
Electrical Characteristicsn at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 60 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 60 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 50 V, IE = 0
ICBO - - 10 nA
Collector cutoff current
VCB = 50 V, IE = 0 , TA = 150 °C
ICBO - - 10 µA
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO - - 10 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
75
100
100
100
50
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.4
1.6
V
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.3
2.6
1) Pulse test: t ≤=300µs, D = 2%
SMBT2907A/MMBT2907A
3 Jun-12-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT200 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - - 8 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 30
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 40
Storage time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
tstg - - 80
Fall time
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
tf- - 30
SMBT2907A/MMBT2907A
4 Jun-12-2002
Test circuits
Delay and rise time
EHN00053
200
-30
Ω
V
Osc.
< 5 ns
t
r
ns200
= 50
< 2ns
Input
r
Z
t0
Ω
0
-16 V
1Ωk
50 Ω
Storage and fall time
EHN00054
37
-6
-30
0
+15 V
1Ω
Ω
k
V
V
< 2 ns
= 50
Input
t
Z
r
0Ω
200 ns
1Ωk
50 Ω
Osc.
< 5 ns
tr
Oscillograph: R > 100Ω, C < 12pF, tr < 5ns
SMBT2907A/MMBT2907A
5 Jun-12-2002
Collector-base capacitance CCB = f (VCB)
f = 1MHz
EHP00747SMBT 2907/A
10
pF
10 10 V
C
CB
10
5
10
cb
555
-1 0 1 2
10
2
1
10
0
5
V
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Transition frequency fT = f (IC)
VCE = 5V
EHP00749SMBT 2907/A
10
MHz
10 10 mA
f
C
10
5
10
T
555
Ι
0123
10
3
2
101
5
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00748SMBT 2907/A
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
tp
=
DT
tp
T
SMBT2907A/MMBT2907A
6 Jun-12-2002
Delay time td = f (IC)
Rise time tr = f (IC)
EHP00751SMBT 2907/A
10
10 mA
t
C
5
r
10
3
2
101
5
10 10
01 2
Ι
5 5
ns
BE
V
td
,
= 0 V
3
10
5
td
tr
, = 10 V
CC
V,
CC
= 20 V
BE
VV, = 30 V
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00750SMBT 2907/A
10
0V
BE sat
C
10
3
1
10
-1
5
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2 1.6
CE sat
V,
5
10
2
V
BE
V
CE
10
-2
Storage time tstg = f(IC)
EHP00752SMBT 2907/A
10
10 mA
t
C
5
stg
10
3
2
10
1
5
10 10
01 2
Ι
5 5
ns
FE
h= 10
3
10
5
FE
= 20
h
Fall time tf = f (IC)
EHP00753SMBT 2907/A
10
10 mA
t
C
5
f
10
3
2
10
1
5
10 10
01 2
Ι
5 5
ns
FE
h= 10
3
10
5
FE
= 20h
V
CC
= 30 V
SMBT2907A/MMBT2907A
7 Jun-12-2002
DC current gain hFE = f (IC)
VCE = 5V
EHP00754SMBT 2907/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
