SEMITOP®3
IGBT Module
SK30GD123
Preliminary Data
Features
 
  
   
   
   
!  
  "#! 
! $%#
   &
'    
 
(' )*  + ,-./.0
Typical Applications*
1    
$2
1   
("1
GD
Absolute Maximum Ratings #3 0/ 4*   
Symbol Conditions Values Units
IGBT
5,1 #63 0/ 4 8099 5
$#63 80/ 4 #3 0/ 4 .. :
#3 ;9 4 00 :
$<= $<=30$ /9 :
5%,1 > 09 5
 5 3 -99 5? 5%, @ 09 5?
5,1 A 8099 5
#63 80/ 4 89 B
Inverse Diode
$C#63 8/9 4 #3 0/ 4 0D :
#3 ;9 4 8E :
$C<= $C<=30$C :
$C1= 3 89 ?   2 #63 8/9 4 8;9 :
Module
$<=1 :
#26 !D9 +++ F8/9 4
# !D9 +++ F80/ 4
5 :* 8 + 0/99 5
Characteristics #3 0/ 4*   
Symbol Conditions min. typ. max. Units
IGBT
5%, 5%, 3 5,* $3 8 : D*/ /*/ -*/ 5
$,1 5%, 395*5, 3 5,1 #63 0/ 4 9*8/ :
#63 80/ 4 :
$%,1 5, 395*5%, 3 .9 5 #63 0/ 4 809 :
#63 80/ 4 :
5,9 #63 0/ 4 8*0 5
#63 80/ 4 8*0 5
, 5%, 3 8/ 5 #63 0/4 /0 G
#63 80/4 E- G
5, $ 3 0/ :* 5%, 3 8/ 5 #63 0/42+ 0 0*/ . 5
#63 80/42+ .*8 .*E 5
 8*-/ C
 5, 3 0/* 5%, 3 9 5 3 8 =) 9*0/ C
 9*88 C
 -/ 
<% 3 DE G 5 3 -995 899 
, $3 0/: .*/ H
 <% 3 DE G #63 80/ 4 D.9 
5%,3>8/5 ./ 
, 0*/ H
<6!  $%# 8 IJK
SK30GD123
1 30-10-2006 DIL © by SEMIKRON
http://store.iiic.cc/
SEMITOP®3
IGBT Module
SK30GD123
Preliminary Data
Features
 
  
   
   
   
!  
  "#! 
! $%#
   &
'    
 
(' )*  + ,-./.0
Typical Applications*
1    
$2
1   
("1
GD
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
5C3 5, $C 3 8/ :? 5%, 3 9 5 #63 0/ 42+ 0 0*/ 5
#63 80/ 42+ 8*; 0*. 5
5C9 #63 80/ 4 8 8*0 5
C#63 80/ 4 /. E. G
$<<= $C3 8/ : #63 80/ 4 8- :
L J 3 !099 :JB 0*E B
, 53 -995 9*- H
<6!   8*E IJK
=  M =8 0*0/ 0*/
.9
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SK30GD123
2 30-10-2006 DIL © by SEMIKRON
http://store.iiic.cc/
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
SK30GD123
3 30-10-2006 DIL © by SEMIKRON
http://store.iiic.cc/
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
SK30GD123
4 30-10-2006 DIL © by SEMIKRON
http://store.iiic.cc/
UL recognized file no. E 63 532
 #80 1  *   "*       N 0
 #80 %
SK30GD123
5 30-10-2006 DIL © by SEMIKRON
http://store.iiic.cc/