©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE180/181/182
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : MJE180
: MJE181
: MJE182
60
80
100
V
V
V
VCEO Collector-Emitter Voltage : MJE180
: MJE181
: MJE182
40
60
80
V
V
V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse) 6 A
IB Base Current 1 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 12.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
IC = 10mA, IB = 0
40
60
80
V
V
V
ICBO Collector Cut- off Current : MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
0.1
0.1
0.1
0.1
0.1
0.1
µA
µA
µA
mA
mA
mA
IEBO Em itter Cut-off Current VBE = 7V, IC = 0 0.1 µA
hFE DC Current Gain VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1.5A
50
30
12
250
VCE(sat) Collector-Emitter Saturation Volt age IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
0.3
0.9
1.7
V
V
V
VBE(sat) Base-Emitter Satura tion Volt age IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA 1.5
2.0 V
V
VBE(on) Base-Emitter ON Voltage VCE = 1V, IC = 500mA 1.2 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 100mA 50 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 30 pF
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE180/181/182
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitanc e
Figure 5. Safe Operating Area Figure 6. Power Derating
012345678910
0
1
2
3
4
5
IB=200mA
IB = 120mA
IB = 140mA
IB = 160mA
IB = 180mA
IB = 100mA
IB = 60mA
IB = 80mA
IB = 40mA
IB = 20mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
10 100 1000 10000
1
10
100
1000
VCE=1V
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1
0.01
0.1
1
10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAG E
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
f=0.1MHZ
IE=0
Cob[pF], CAPACITANC E
VCB[V], COLLECTOR-BASE VO LTAGE
1 10 100
0.01
0.1
1
10
VCE MAX.
MJE182
MJE181
MJE180
Dissipation Limited
ICMAX.(Pulse)
IC MAX.(DC)
100µs
5ms
500µs
S/B Limited
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE180/181/182
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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