ZMY3V9 to ZMY110
Document Number 85788
Rev. 1.5, 12-Jan-05
Vishay Semiconductors
www.vishay.com
1
18315
Zener Diodes
Features
Silicon Planar Power Zener Diodes.
For use in stablilizing and clipping circuits with
high power rating.
The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
These diodes are also available in the DO-41 case
with the type designation ZPY1 ... ZPY100.
Mechanical Data
Case: MELF Glass case
Weight: approx. 135 mg
Packaging Codes/Options:
GS18/ 5 k per 13 " reel (12 mm tape), 10 k/box
GS08/ 1.5 k per 7 " reel (12 mm tape), 12 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Parameter Test condition Symbol Value Unit
Zener current (see Table
"Characteristics")
Power dissipation Ptot 1.0 1) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient (max.)
RthJA 170 1) °C/W
Thermal resistance junction to
case (typ.)
RthJC 60 °C/W
Junction temperature Tj175 °C
Storage temperature TS- 55 to + 175 °C
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Document Number 85788
Rev. 1.5, 12-Jan-05
ZMY3V9 to ZMY110
Vishay Semiconductors
Electrical Characteristics
1) Valid provided that electrodes are kept at ambient temperature
2) Tested with pulses tp = 5 ms
The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead
of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dis-
sipation see types ZMU100 ... ZMU180
Partnumber Zener Voltage (2) Dynamic Resistance Temperature Coefficient
of Zener Voltage
Te s t
Current
Reverse
Voltage
Admissible
Zener
Current (1)
VZ @ IZT rzj @ IZT, f = 1 kHz αVZ @ IZT IZT VR @
IR = 0.5 µA
IZ @
Tamb=25°C
V10-4/°C mA VmA
min max typ min max
ZMY3V9 3.7 4.1 7 4 -7 2 100 - 203
ZMY4V3 4 4.6 7 4 -7 3 100 - 182
ZMY4V7 4.4 5 7 4 -7 4 100 - 165
ZMY5V1 4.8 5.4 5 2 -6 5 100 0.7 150
ZMY5V6 5.2 6 2 1 -3 5 100 1.5 135
ZMY6V2 5.8 6.6 2 1 -1 6 100 2 128
ZMY6V8 6.4 7.2 2 1 0 7 100 3 110
ZMY7V5 7 7.9 2 1 0 7 100 5 100
ZMY8V2 7.7 8.7 2 1 3 8 100 6 89
ZMY9V1 8.5 9.6 4 2 3 8 50 7 82
ZMY10 9.4 10.6 4 2 5 9 50 7.5 74
ZMY11 10.4 11.6 7 3 5 10 50 8.5 66
ZMY12 11.4 12.7 7 3 5 10 50 9 60
ZMY13 12.4 14.1 9 4 5 10 50 10 55
ZMY15 13.8 15.8 9 4 5 10 50 11 49
ZMY16 15.3 17.1 10 5 7 11 25 12 44
ZMY18 16.8 19.1 11 5 7 11 25 14 40
ZMY20 18.8 21.2 12 6 7 11 25 15 36
ZMY22 20.8 23.3 13 7 7 11 25 17 34
ZMY24 22.8 25.6 14 8 7 12 25 18 29
ZMY27 25.1 28.9 15 9 7 12 25 20 27
ZMY3028322010 7 122522.525
ZMY3331352011 7 12252522
ZMY3634386025 7 12102720
ZMY3937416030 8 12102918
ZMY4340468035 8 13103217
ZMY4744508040 8 13103515
ZMY51485410045 8 13103814
ZMY56526010050 8 13104213
ZMY62586613060 8 13104711
ZMY68647213065 8 13105110
ZMY75707916070 8 131056 9
ZMY82778816080 8 131061 8
ZMY91 85 96 250 120 9 13 5 68 7.5
ZMY100 94 106 250 130 9 13 5 75 7
ZMY110 104 116 250 150 9 13 5 82 6.4
ZMY3V9 to ZMY110
Document Number 85788
Rev. 1.5, 12-Jan-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Dynamic Resistance vs. Zener Current
Figure 2. Dynamic Resistance vs. Zener Current
Figure 3. Dynamic Resistance vs. Zener Current
18312
18313
18314
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
18289
18286
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Document Number 85788
Rev. 1.5, 12-Jan-05
ZMY3V9 to ZMY110
Vishay Semiconductors
Figure 6. Breakdown Characteristics
Figure 7. Breakdown Characteristics
18309
18310
ZMY3V9 to ZMY110
Document Number 85788
Rev. 1.5, 12-Jan-05
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm (Inches)
Figure 8. Breakdown Characteristics
18311
Cathode Mark
18317
1.25
(0.049)
MIN
4.00 (0.157)
MAX
6.50 (0.256)
REF
3.00 (0.118)
MIN
5.2 (0.205)
4.8 (0.189)
2.6 (0.102)
2.4 (0.094)
0.55 (0.022)
ISO Method E
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Document Number 85788
Rev. 1.5, 12-Jan-05
ZMY3V9 to ZMY110
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423