Document Number: 91272 www.vishay.com
S10-1135-Rev. C, 10-May-10 1
Power MOSFET
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310, SiHFR310)
• Straight Lead (IRFU310, SiHFU310)
• Available in Tape and Reel
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = 1.7 A (see fig. 12).
c. ISD ≤ 1.7 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V) 400
RDS(on) (Ω)V
GS = 10 V 3.6
Qg (Max.) (nC) 12
Qgs (nC) 1.9
Qgd (nC) 6.5
Configuration Single
N-
C
hannel M
OS
FET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
GDS
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFR310TRR-GE3 SiHFU310-GE3
Lead (Pb)-free IRFR310PbF IRFR310TRLPbFaIRFR310TRPbFaIRFR310TRRPbFaIRFU310PbF
SiHFR310-E3 SiHFR310TL-E3aSiHFR310T-E3aSiHFR310TR-E3aSiHFU310-E3
SnPb IRFR310 IRFR310TRLaIRFR310TRa- IRFU310
SiHFR310 SiHFR310TLaSiHFR310Ta- SiHFU310
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
1.7
A
TC = 100 °C 1.1
Pulsed Drain CurrentaIDM 6.0
Linear Derating Factor 0.20 W/°C
Linear Derating Factor (PCB Mount)e0.020
Single Pulse Avalanche EnergybEAS 86 mJ
Repetitive Avalanche CurrentaIAR 1.7 A
Repetitive Avalanche EnergyaEAR 2.5 mJ
Maximum Power Dissipation TC = 25 °C PD
25 W
Maximum Power Dissipation (PCB Mount)eTA = 25 °C 2.5
Peak Diode Recovery dV/dtcdV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 260d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91272
2S10-1135-Rev. C, 10-May-10
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)aRthJA -50
°C/W
Maximum Junction-to-Ambient RthJA - 110
Maximum Junction-to-Case RthJC -5.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 400 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.47 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 400 V, VGS = 0 V - - 25 μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 1.0 Ab--3.6Ω
Forward Transconductance gfs VDS = 50 V, ID = 1.0 Ab0.97 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
- 170 -
pFOutput Capacitance Coss -34-
Reverse Transfer Capacitance Crss -6.3-
Total Gate Charge Qg
VGS = 10 V ID = 2.0 A, VDS = 320 V,
see fig. 6 and 13b, c
--12
nC Gate-Source Charge Qgs --1.9
Gate-Drain Charge Qgd --6.5
Turn-On Delay Time td(on)
VDD = 200 V, ID = 2.0 A,
Rg = 24 Ω, RD = 95 Ω,
see fig. 10b, c
-7.9-
ns
Rise Time tr -9.9-
Turn-Off Delay Time td(off) -21-
Fall Time tf -11-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--1.7
A
Pulsed Diode Forward CurrentaISM --6.0
Body Diode Voltage VSD TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb--1.6V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb- 240 540 ns
Body Diode Reverse Recovery Charge Qrr - 0.85 1.6 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Document Number: 91272 www.vishay.com
S10-1135-Rev. C, 10-May-10 3
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com Document Number: 91272
4S10-1135-Rev. C, 10-May-10
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91272 www.vishay.com
S10-1135-Rev. C, 10-May-10 5
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
www.vishay.com Document Number: 91272
6S10-1135-Rev. C, 10-May-10
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
RG
IAS
0.01 Ω
tp
D.U.T.
L
VDS
+
-VDD
10 V
Vary tp to obtain
required IAS
I
AS
V
DS
V
DD
V
DS
t
p
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91272 www.vishay.com
S10-1135-Rev. C, 10-May-10 7
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91272.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 91344 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
E
b3
L3
L4
b2
e
b
D H
E1
D1
A
c2
L1
L2
c
A1
L
θ
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
E 6.40 6.73 0.252 0.265
L 1.40 1.77 0.055 0.070
L1 2.743 REF 0.108 REF
L2 0.508 BSC 0.020 BSC
L3 0.89 1.27 0.035 0.050
L4 0.64 1.01 0.025 0.040
D 6.00 6.22 0.236 0.245
H 9.40 10.40 0.370 0.409
b 0.64 0.88 0.025 0.035
b2 0.77 1.14 0.030 0.045
b3 5.21 5.46 0.205 0.215
e 2.286 BSC 0.090 BSC
A 2.20 2.38 0.087 0.094
A1 0.00 0.13 0.000 0.005
c 0.45 0.60 0.018 0.024
c2 0.45 0.58 0.018 0.023
D1 5.30 - 0.209 -
E1 4.40 - 0.173 -
θ0' 10' 0' 10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
D
A
c2
c
Lead tip
5
5
(Datum A)
Thermal PAD
E1
4
D1
View A - A
A1
A
A
C
Seating
plane
CC
BB
θ1
θ2
B
4
4
4
3
5
L1
L
L3
3 x b2
3 x b
3
b4
E
2 x e 0.010 C B
M
A
0.25
0.010 BA
0.25
L2
A
C
M
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
