TO-220 Plastic-Encapsulated Transistors
TIP41A/41B/41C TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: 6 A
Collector-base voltage
V(BR)CBO: TIP41A : 60 V
TIP41B : 80 V
TIP41C : 100 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
41A
Collector-base breakdown voltage 41B
41C V(BR)CBO Ic= 1mA, IE=0 60
80
100 V
41A
Collector-emitter breakdown voltage 41B
41C V(BR)CEO Ic= 30mA, IB=0 60
80
100 V
E mitter-b ase break dow n vol t age V(BR)EBO I
E= 1mA, IC=0 5 V
41A
Collector cut-off current 41B
41C ICBO VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0 0.4 mA
41A
Collector cut-off current 41B
41C
ICEO
VCE= 30V, IB= 0
VCE= 30V, IB= 0
VCE= 60V, IB= 0 0.7 mA
Emi tter cut -o ff curr en t IEBO V
EB=5V, IC=0 1 mA
hFE(1) V
CE= 4V, IC= 0.3A 30
DC current gain hFE(2) V
CE=4 V, IC= 3A 15 75
Collector-emitter saturat i on voltage VCE(sat) I
C=6A, IB=0.6A 1.5 V
Base-emitter volt age VBE(on V
CE= 4V, IC=6A 2 V
Transition fre quency fT VCE=10V , IC=0.5A
f =1MHz 3 MHZ
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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Electronics
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