BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1577W
Document number: BL/SSSTF030 www.galaxycn.com
Rev.A 1
FEATURES
z Power dissipation.(PC=200mW)
z Excellent HFE Linearity.
APPLICATIONS
z General purpose application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2SA1577W HP/HQ/HR SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 200 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Pb
Lead-free
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1577W
Document number: BL/SSSTF030 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V
Collector-emitter breakdown
voltage V(BR)CEO I
C=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO I
E=-100μA,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 μA
Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA
DC current gain hFE VCE=-3V,IC=-10mA 82 390
Collector-emitter saturation voltage VCE(sat) I
C=-100mA, IB=-10mA -0.4 V
Transition frequency fT
VCE=-5V, IC= -20mA
f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF
CLASSIFICANTION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
marking HP HQ HR
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1577W
Document number: BL/SSSTF030 www.galaxycn.com
Rev.A 3
PACKAGE OUTLINE
Plastic surface mounted package SOT-323
PACKAGE INFORMATION
Device Package Shipping
2SA1577W SOT-323 3000/Tape&Reel
SOT-323
Dim Min Max
A 1.8 2.2
B 1.15 1.35
C 1.0Typical
D 0.15 0.35
E 0.25 0.40
G 1.2 1.4
H 0.02 0.1
J 0.1Typical
K 2.1 2.3
All Dimensions in mm
