©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX54/A/B/C
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP *Collector Current (Pulse) - 12 A
IB Base Current - 0.2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining V oltage
: BDX54
: BDX54A
: BDX54B
: BDX54C
IC = - 100mA, IB = 0 - 45
- 60
- 80
- 100
V
V
V
V
ICBO Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
VCE = - 22V, IB = 0
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 mA
hFE * DC Current Gain VCE = - 3V, IC = - 3A 750
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 12mA - 2 V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 12mA - 2.5 V
VF* Parallel Diode Forward V oltage IF = - 3A
IF = - 8A - 1.8
- 2.5 - 2.5 V
V
BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX53, BDX53A, BDX53B and BDX 53C respect ively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BDX54/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -10
100
1000
10000
100000
VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
-3.2
-3.4
-3.6
IC = 250IB
VBE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0 -1 -10
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
-3.2
IC = 250IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
VF(sat )[V], F ORWARD VOLTAGE
IF[A], FORWARD CURRENT
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDX54C
BDX54B
BDX54A
IC Max. (Continuous)
IC Max. (Pulsed)
BDX54
DC
100us
10us
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PD[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX54/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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ISOPLANAR™
MICROWIRE™
POP™
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QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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