HCC/HCF4049UB
HCC/HCF4050B
HEX BUFFER/CONVERTERS
DESCRIPTION
.HIGH SINK CURRENT FOR DRIVING 2 TTL
LOADS
.HIGH-TO-LOWLEVELLOGIC CONVERSION
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.HIGH SINK” AND ”SOURCE” CURRENT CA-
PABILITY
.5V, 10V AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF100nAAT18VAND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENT CURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD No. 13A, STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
June 1989
The HCC4049UB/4050B (extended temperature
range) and the HCF4049UB/4050B (intermediate
temperature range) are monolithic integrated cir-
cuits available in 16-lead dual in-line plastic or ce-
ramic package and plastic micro package.
The HCC/HCF4049UB/4050B are inverting and
non-inverting hex buffers, respectively, and feature
logic-level conversion usingonlyonesupply voltage
(VDD). The input-signal high level (VIH) can exceed
theVDD supplyvoltage whenthesedevicesareused
for logic level conversions. These devices are in-
tendedfor use asCOS/MOStoDTL/TTLconverters
and candrivedirectly twoDTL/TTLloads (VDD =5V,
VOL 0.4V, andIOL 3.2mA).
EY
(Plastic Package) F
(Ceramic Frit SealPackage)
M1
(Micro Package)
ORDERCODES :
HCC40XXBF HCF40XXBM1
HCF40XXBEY HCF40XXBC1
PIN CONNECTIONS
4049UB INVERTING TYPE
4050B NON-INVERTING TYPE
4049UB
4050B
C1
(Plastic Chip Carrier)
1/12
SCHEMATIC DIAGRAMS (1 of 6 identical units)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDD* Supply Voltage :HCC Types
HCF Types 0.5 to + 20
0.5 to + 18 V
V
ViInput Voltage 0.5 to VDD + 0.5 V
IIDC Input Current (any one input) ±10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package-temperature Range
200
100
mW
mW
Top Operating Temperature : HCC Types
HCF Types 55 to + 125
–40to+85 °C
°C
T
stg Storage Temperature 65 to + 150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
VDD Supply Voltage :HCC Types
HCF Types 3to18
3to15 V
V
V
IInput Voltage 0 to VDD V
Top Operating Temperature : HCC Types
HCF Types 55 to + 125
–40to+85 °C
°C
4049UB 4050B
Stresses above those listed under Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
*Allvoltage values are referred to VSS pinvoltage.
HCC/HCF4049UB/4050B
2/12
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
Symbol Parameter VIVOVDD TLow*25°CT
High*Unit
(V) (V) (V) Min. Max. Min. Typ. Max. Min. Max.
ILQuiescent
Supply
Current HCC
Types
0/ 5 5 1 0.02 1 30
µA
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
HCF
Types
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
VOH Output High
Voltage 0/ 5 5 4.95 4.95 4.95 V
0/10 10 9.95 9.95 9.95
0/15 15 14.95 14.95 14.95
VOL Output Low
Voltage 5/0 5 0.05 0.05 0.05 V
10/0 10 0.05 0.05 0.05
15/0 15 0.05 0.05 0.05
VIH Input High
Voltage (4049UB) 0.5 5 4 4 4 V
1108 8 8
21512 12 12
V
IH Input High
Voltage (4050B) 4.5 5 3.5 3.5 3.5 V
9107 7 7
13.5 16 11 11 11
VIL Input Low
Voltage (4049UB) 4.5 5 1 1 1 V
910 2 2 2
13 15 3 3 3
VIL Input Low
Voltage (4050B) 0.5 5 1.5 1.5 1.5 V
110 3 3 3
1.5 15 4 4 4
IOH Output
Drive
Current HCC
Types
0/ 5 2.5 5 1.6 –1.25 6.4 0.9
mA
0/ 5 4.6 5 0.64 –0.51 1.6 –0.36
0/10 9.5 10 1.6 –1.30 3.6 0.9
0/15 13.5 15 4.7 –3.75 12 2.7
HCF
Types
0/ 5 2.5 5 1.5 –1.25 6.4 1
0/ 5 4.6 5 0.61 –0.51 1.6 –0.42
0/10 9.5 10 1.5 –1.25 3.6 1
0/15 13.5 15 4.5 –3.75 12 3
IOL Output
Sink
Current HCC
Types
0/ 5 0.4 5 3.75 3.2 6.4 2.2
mA
0/10 0.5 10 10 8 16 5.6
0/15 1.5 15 30 24 48 17
HCF
Types
0/ 5 0.4 5 3.6 3.2 6.4 2.6
0/10 0.5 10 9.6 8 16 6.6
0/15 1.5 15 28 24 48 19
IIH,I
IL Input
Leakage
Current
HCC
Types 0/18 18 ±0.1 ±10–5 ±0.1 ±1µA
HCF
Types 0/15 15 ±0.3 ±10–5 ±0.3 ±1
CIInput
Capacitance 4049UB
4050B Any Input 15
522.5
7.5 pF
(*) TLow =–55°C for HCC device : 40°CforHCF device.
THigh = + 125°CforHCC device : + 85°CforHCF device.
The Noise Margin (only HCC/HCF4050B type) for both 1 and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V,
2.5V min. with VDD = 15V.
HCC/HCF4049UB/4050B
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DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C, CL= 50pF, RL= 200k,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns)
Test Conditions Value
Symbol Parameter VI(V) VDD (V) Min. Typ. Max. Unit
tPLH Propagation Delay Time
(4049UB) 5 5 60 120
ns
10 10 32 65
10 5 45 90
15 15 25 50
15 5 45 90
tPLH Propagation Delay Time
(4050B) 5 5 70 140
ns
10 10 40 80
10 5 45 90
15 15 30 60
15 5 40 80
tPHL Propagation delay Time
(4049UB) 55 3265
10 10 20 40
10 5 15 30
15 15 15 30
15 5 10 20
tPHL Propagation Delay Time
(4050B) 5 5 55 110
ns
10 10 22 55
10 5 50 100
15 15 15 30
15 5 50 100
tTLH Transition Time 5 5 80 160
ns
10 10 40 80
15 15 30 60
tTHL Transition Time 5 5 30 60
10 10 20 40
15 15 15 30
HCC/HCF4049UB/4050B
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Minimum and Maximum Voltage Transfer Charac-
teristics for 4049UB. Minimum and Maximum Voltage Transfer Charac-
teristics for 4050B.
Typical Voltage Transfer Characteristics as a Func-
tion of Temperature for 4049UB. Typical Voltage TransferCharacteristics as a Func-
tion of Temperature for 4050B.
Typical Output Low (sink) Current Characteristics. MinimumOutputLow(sink) CurrentCharacteristics.
HCC/HCF4049UB/4050B
5/12
Typical Output High (source) Current Charac-
teristics. Minimum Output High (source) Current Charac-
teristics.
Typical Power Dissipation per Buffer/Inverter vs.
Frequency. Typical Power Dissipation vs. Input Transition Time
per Inverter for 4049UB.
Typical Power Dissipation vs. Input Transition Time
perInverter for 4050B. Logic-Level Conversion Application.
HCC/HCF4049UB/4050B
6/12
TEST CIRCUITS
Input Current.
Quiescent Device Current. Input Voltage.
HCC/HCF4049UB/4050B
7/12
Plastic DIP16 (0.25) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
P001C
HCC/HCF4049UB/4050B
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Ceramic DIP16/1 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406
P 7.8 8.05 0.307 0.317
Q 5.08 0.200
P053D
HCC/HCF4049UB/4050B
9/12
SO16 (Narrow) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45°(typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8°(max.)
P013H
HCC/HCF4049UB/4050B
10/12
PLCC20 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015
G 0.101 0.004
M 1.27 0.050
M1 1.14 0.045
P027A
HCC/HCF4049UB/4050B
11/12
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norfor any infringement of patents orother rights of third parties which mayresults from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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HCC/HCF4049UB/4050B
12/12