BUK7Y13-40B,115 - NEXPERIA

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use

in automotive critical applications.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Rev. 03 — 26 May 2008 Product data sheet

175 °C rated Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

12 V loads Air bag

Automotive ABS systems Automotive transmission control

Fuel pump and injection Motors, lamps and soleno ids

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C --40V

IDdrain current VGS =10V; T

mb =25°C;

see Figure 1 and 4--58A

Ptot total power dissipation Tmb =25°C; see Figure 2 --85W

Dynamic characteristics

QGD gate-drain charge ID=10A; V

DS =32V;

VGS = 10 V; see Figure 14 -5-nC

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=25A;

Tj=25°C; see Figure 13 and

-1113mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=58A; V

sup ≤40 V;

RGS =50Ω; VGS =10V;

Tj(init) =25°C; unclamped

--85mJ

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 2 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

2. Pinning information

3. Ordering information

4. Limiting values

[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[2] Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[3] Refer to application note AN10273 for further information.

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1, 2, 3 S source

SOT669 (LFPAK)

4 G gate

mb D mounting base;

connected to drain

1234

bb076

Table 3. Orderi ng information

Type number Package

Name Description Version

BUK7Y13-40B LFPAK plastic single-en ded surface-mounted package (LFPAK); 4 leads SOT669

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C-40V

VDGR drain-gate voltage RGS =20kΩ-40V

VGS gate-source voltage 20 20 V

IDdrain current Tmb =25°C; VGS = 10 V; see Figure 1 and 4-58A

Tmb = 175 °C; VGS = 10 V; see Figure 1 -41A

IDM peak drain current Tmb =25°C; tp≤10 μs; pulsed; see Figure 4 - 234 A

Ptot total power dissipation Tmb =25°C; see Figure 2 -85W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source avalanche

energy

ID=58A; V

sup ≤40 V; RGS =50Ω;

VGS =10V; T

j(init) =25°C; unclamped -85mJ

EDS(AL)R repetitive drain-source

avalanche energy see Figure 3 [1][2]

[3] --J

Source-drain diode

ISsource current Tmb =25°C-58A

ISM peak source current tp≤10 μs; pulsed; Tmb =25°C - 234 A

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 3 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

Fig 1. Continuous drain current as a function of

mounting base temp era t ure Fig 2. Normalized total power dissipation as a

function of mounting base temperature

Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period

003aab217

0 50 100 150 200

(°C)

(A)

Tmb (°C)

0 20015050 100

03na19

120

Pder

(%)

VGS 10V

Pder =Ptot

Ptot(25°C)× 100 %

003aab220

-1

-3

-2

-1

1 10

(ms)

(A)

(1)

(2)

(3)

(1) Singleípulse;Tj=25°C.

(2) Singleípulse;Tj= 150°C.

(3) Repetitive.

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 4 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aab218

102

103

(A)

10−1

VDS (V)

1 102

Limit RDSon = VDS / ID

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

Tmb =25°C;IDM is single pulse

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

see Figure 5 --1.8K/W

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

03nm01

-2

-1

-6

-5

-4

-3

-2

-1

(s)

th (j-mb)

(K/W)

δ = 0.5

0.2

0.1

0.05

single shot

0.02

δ =

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 5 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250μA; VGS =0V;

Tj=25°C40 - - V

ID=250μA; VGS =0V;

Tj=-55°C36 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS = VGS; Tj=25°C;

see Figure 10 and 11 234V

ID=1mA; V

DS = VGS;

Tj=-55°C; see Figure 10 --4.4V

ID=1mA; V

DS = VGS;

Tj= 175 °C; see Figure 10 1- - V

IDSS drain leakage current VDS =40V; V

GS =0V;

Tj= 175 °C--500μA

VDS =40V; V

GS =0V; T

j=25°C - 0.02 1 μA

IGSS gate leakage current VDS =0V; V

GS =20V; T

j=25°C - 2 100 nA

VDS =0V; V

GS =-20V;

Tj=25°C-2100nA

RDSon drain-source on-sta te

resistance VGS =10V; I

D=25A;

Tj= 175 °C; see Figure 12 --25mΩ

VGS =10V; I

D=25A; T

j=25°C;

see Figure 13 and 12 -1113mΩ

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =25V; T

j=25°C;

see Figure 16 -0.851.2V

trr reverse recovery time IS=20A; dI

S/dt = 100 A/μs;

VGS =0V; V

DS =30V -41-ns

Qrrecovered charge - 22 - nC

Dynamic characteristics

QG(tot) total gate charge ID=10A; V

DS =32V;

VGS =10V; seeFigure 14 -19-nC

QGS gate-source charge - 6 - nC

QGD gate-drain charge - 5 - nC

Ciss input capacitance VGS =0V; V

DS =25V;

f=1MHz; T

j=25°C;

see Figure 15

- 983 1311 pF

Coss output capacitance - 280 336 pF

Crss reverse transfer

capacitance - 138 189 pF

td(on) turn-on delay time VDS =30V; R

L=2.5Ω;

VGS =10V; R

G(ext) =10Ω

-9-ns

trrise time - 25 - ns

td(off) turn-off delay time - 35 - ns

tffall time - 27 - ns

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 6 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

Fig 6. Outp ut characteristics: drain current as a

function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function

of gate-sour c e volta ge; typical values

Fig 8. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 9. Forward transconductance as a function of

drain current; typical values

VDS (V)

0108262

003aab394

120

160

(A)

VGS (V) = 4.5

5.5

6.5

7.5

8.5

9.51020

VGS (V)

42016812

003aab395

RDSon

(mΩ)

Tj=25°C

Tj=25°C;ID=25A

003aab400

VGS (V)

0642

(A)

Tj = 175 °C

Tj = 25 °C

ID (A)

5302515 2010

003aab401

gfs

(S)

VDS =25V

Tj=25°C;VDS =25V

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 7 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

Fig 10. Gate-sour c e thr e shold voltage as a function of

junction temperature Fig 11. Sub-threshold drain current as a function of

gate-sour c e voltage

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

Tj (°C)

−60 180120060

03aa32

VGS(th)

(V)

max

typ

min

03aa35

VGS (V)

0642

10−4

10−5

10−2

10−3

10−1

(A)

10−6

min typ max

ID=1mA;VDS =VGS

Tj=25°C;VDS =VGS

Tj (°C)

−60 180120060

003aab851

0.5

1.5

ID (A)

0 16012040 80

003aab396

RDSon

(mΩ)

VGS (V) = 6 78

a=RDSon

RDSon(25°C)

Tj=25°C

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 8 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Input, output and reverse transfer capacit ances

as a function of drain- source voltage; typical

values

Fig 16. Source current as a function of source-drain voltage; typical values

003aab399

QG (nC)

024168

VGS

(V)

VDS = 14 V

VDS = 32 V

003aab397

800

400

1200

1600

(pF)

VDS (V)

10−1102

101

Ciss

Coss

Crss

Tj=25°C;ID=10A

VGS =0V;f=1MHz

VSD (V)

0 1.00.80.4 0.60.2

003aab398

(A)

Tj = 175 °C

Tj = 25 °C

VGS =0V

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 9 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

7. Package outline

Fig 17. Package outline SOT669 (LFPAK)

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT669 MO-235 04-10-13

06-03-16

0 2.5 5 mm

scale

A2bcA e

UNIT

DIMENSIONS (mm are the original dimensions)

mm 1.10

0.95

0.15

0.00

1.20

1.01

0.50

0.35

4.41

3.62

2.2

2.0

0.9

0.7

0.25

0.19

0.30

0.24

4.10

3.80

6.2

5.8

1.3

0.8

0.85

0.40

1.3

0.8

8°

0°

D(1)

5.0

4.8

E(1)

3.3

3.1

E1(1)

D1(1)

max

0.25 4.20 1.27 0.25 0.1

1234

mounting

base

Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

1/2 e

(A )

detail X

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 10 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK7Y13-40B_3 20080526 Product data sheet - BUK7Y13-40B_2

Modifications: •Table 5, maximum thermal resistance value updated

BUK7Y13-40B_2 20071002 Product data sheet - BUK7Y13-40B_1

BUK7Y13-40B_1 20070924 Product data sheet - -

BUK7Y13-40B_3

Product data sheet Rev. 03 — 26 May 2008 11 of 12

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data — The Quick reference data i s an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — Nexperia products are sold

subject to the general terms and conditions of commercial sale, as publi sh ed

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For additional information, please visit: http://www.nexperia.com

For sales office addresses, send an email to: salesaddresses@nexperia.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document cont ains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Nexperia BUK7Y13-40B

N-channel TrenchMOS standard level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Contact information. . . . . . . . . . . . . . . . . . . . . 11

11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

26 May 2008