2013-11-21
1
BFR106
Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor
• 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
• For UHF / VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR106 R7s 1=B 2=E 3=C SOT23
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage,
TA = 25°C
T
A
= -55°C
VCEO
16
15
V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 3
Collector current IC210 mA
Base current IB21
Total power dissipation1)
TS ≤ 76 °C
Ptot 700 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 105 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2013-11-21
2
BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
VCE = 10 V, VBE = 0
ICES
-
-
-
0.001
1
0.03
µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - 1 30 nA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEBO - 1 30
DC current gain
IC = 70 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
2013-11-21
3
BFR106
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 70 mA, VCE = 8 V, f = 500 MHz
fT3.5 5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.85 1.2 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.27 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 3.9 -
Minimum noise figure
IC = 20 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin
-
-
1.8
3
-
-
dB
2013-11-21
4
BFR106
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Power gain, maximum available1)
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gma
-
-
13
8.5
-
-
dB
Transducer gain
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
|S21e|2
-
-
10.5
5
-
-
dB
Third order intercept point at output2)
VCE = 8 V, IC = 70 mA, f = 0.9 GHz ,
ZS=ZL=50Ω
IP3- 31 - dBm
1dB compression point
IC = 70 mA, VCE = 8 V, ZS=ZL=50Ω,
f = 0.9 GHz
P-1dB - 22 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2013-11-21
5
BFR106
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
500
550
600
mW
750
Ptot
2013-11-21
6
BFR106
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet
website www.infineon.com/rf.models.
Please consult our website and download the latest versions before
actually starting your design.
2013-11-21
7
BFR106
Package SOT23
2013-11-21
8
BFR106
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
